32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-

32K x 8 LOW VOLTAGE CMOS STATIC RAM

FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 μW (typical) CMOS standby — 65 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ

32K x 8 LOW VOLTAGE CMOS STATIC RAM

FEATURES • High-speed access times: — 10 ns • Automatic power-down when chip is deselected • CMOS low power operation — 60 μW (typical) CMOS standby — 65 mW (typical) operating • TTL compatible interface levels • Single 3.3V power supply • Fully static operation: no clock or refresh requ

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-

封装/外壳：28-BSOJ（0.300"，7.62mm 宽） 包装：卷带（TR） 描述：IC SRAM 256KBIT PARALLEL 28SOJ 集成电路（IC） 存储器

封装/外壳：28-BSOJ（0.300"，7.62mm 宽） 包装：卷带（TR） 描述：IC SRAM 256KBIT PARALLEL 28SOJ 集成电路（IC） 存储器

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-

32K x 8 LOW VOLTAGE CMOS STATIC RAM

DESCRIPTION The ISSI IS61LV256AL is a very high-speed, low power, 32,768-wordby8-bitstaticRAM.ItisfabricatedusingISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns maximum. FEATURES • High-