IS61LV2568说明书PDF资料现货行情报价ISSI-IC资料网

您好,欢迎来到ic资料网！

登录注册

芯片资料

数据手册
丝印反查
库存查询
行业新闻
生产厂家
替换型号
晶体管

精确

IS61LV2568价格

参考价格：￥24.7401

型号：IS61LV2568L-10TL 品牌：ISSI 备注：这里有IS61LV2568多少钱，2026年最近7天走势，今日出价，今日竞价，IS61LV2568批发/采购报价，IS61LV2568行情走势销售排行榜，IS61LV2568报价。

型号	功能描述	生产厂家企业	LOGO
IS61LV2568	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568	ASYNCHRONOUS STATIC RAM, High Speed A.SRAM	ISSI 矽成半导体	ISSI
IS61LV2568_03	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-10K	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-10K	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-10KI	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-10T	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-10T	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-10TI	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-12K	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-12K	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-12KI	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-12T	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-12T	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-15K	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-15T	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-8K	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568-8T	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568 is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568 is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low powe	ISSI 矽成半导体	ISSI
IS61LV2568L	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low po	ISSI 矽成半导体	ISSI
IS61LV2568L-10KI	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low po	ISSI 矽成半导体	ISSI
IS61LV2568L-10KLI	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low po	ISSI 矽成半导体	ISSI
IS61LV2568L-10T	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low po	ISSI 矽成半导体	ISSI
IS61LV2568L-10TL	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low po	ISSI 矽成半导体	ISSI
IS61LV2568L-8K	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low po	ISSI 矽成半导体	ISSI
IS61LV2568L-8T	256K x 8 HIGH-SPEED CMOS STATIC RAM DESCRIPTION The ISSI IS61LV2568L is a very high-speed, low power, 262,144-word by 8-bit CMOS static RAM. The IS61LV2568L is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low po	ISSI 矽成半导体	ISSI
IS61LV2568L	256K x 8 HIGH-SPEED CMOS STATIC RAM 文件：242.4 Kbytes Page：14 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IS61LV2568L	256K x 8 HIGH-SPEED CMOS STATIC RAM	ISSI 矽成半导体	ISSI
IS61LV2568L_08	256K x 8 HIGH-SPEED CMOS STATIC RAM 文件：242.4 Kbytes Page：14 Pages	ISSI 矽成半导体	ISSI
IS61LV2568L-10KI	256K x 8 HIGH-SPEED CMOS STATIC RAM 文件：242.4 Kbytes Page：14 Pages	ISSI 矽成半导体	ISSI
IS61LV2568L-10KLI	256K x 8 HIGH-SPEED CMOS STATIC RAM 文件：242.4 Kbytes Page：14 Pages	ISSI 矽成半导体	ISSI
IS61LV2568L-10KLI-TR	封装/外壳：36-BSOJ（0.400"，10.16mm 宽）包装：托盘描述：IC SRAM 2MBIT PARALLEL 36SOJ 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LV2568L-10T	封装/外壳：44-TSOP（0.400"，10.16mm 宽）包装：托盘描述：IC SRAM 2MBIT PARALLEL 44TSOP II 集成电路（IC）存储器	ETC 知名厂家	ETC
IS61LV2568L-10T	256K x 8 HIGH-SPEED CMOS STATIC RAM 文件：242.4 Kbytes Page：14 Pages	ISSI 矽成半导体	ISSI
IS61LV2568L-10TL	256K x 8 HIGH-SPEED CMOS STATIC RAM 文件：242.4 Kbytes Page：14 Pages	ISSI 矽成半导体	ISSI
IS61LV2568L-10TL-TR	256K x 8 HIGH-SPEED CMOS STATIC RAM 文件：242.4 Kbytes Page：14 Pages	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
IS61LV2568L-8K	256K x 8 HIGH-SPEED CMOS STATIC RAM 文件：242.4 Kbytes Page：14 Pages	ISSI 矽成半导体	ISSI
IS61LV2568L-8T	256K x 8 HIGH-SPEED CMOS STATIC RAM 文件：242.4 Kbytes Page：14 Pages	ISSI 矽成半导体	ISSI
IS61LV2568L-8TL	256K x 8 HIGH-SPEED CMOS STATIC RAM 文件：242.4 Kbytes Page：14 Pages	ISSI 矽成半导体	ISSI
IC61LV2568	256K x 8 Hight Speed SRAM with 3.3V DESCRIPTION The ICSI IC61LV2568 is a very high-speed, low power, 262,144-word by 8-bit COMS static RAM. The IC61LV2568 is fabricated using ICSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher preformance and low powe	ICSI	ICSI

IS61LV2568产品属性

类型
描述
型号
IS61LV2568
制造商
ISSI
制造商全称
Integrated Silicon Solution, Inc
功能描述
256K x 8 HIGH-SPEED CMOS STATIC RAM

IS61LV2568供应商更多...

更新时间：2026-3-3 10:35:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市科恒伟业电子有限公司	IS61LV2568-12K	ICSI	2450+	SOJ36	6540	只做原厂原装正品现货或订货!终端工厂可以申请样品!	询价
深圳市宏捷佳电子科技有限公司	IS61LV2568L-8TL-TR	ISSI	2023+	TSOP44	53500	正品,原装现货	询价
芯有半导体（深圳）有限公司	IS61LV2568L-10TL	ISSI	2008	TSOP	1343	厂家指定一级分销全新原装现货价	询价
深圳市拓亿芯电子有限公司	IS61LV2568L-10TL	ISSI	25+	TSOP	25000	代理渠道假一罚十	询价
深圳瞄钧科技有限公司	IS61LV2568L-10L	ISSI	24+	DIP	48650	公司现货实单价可谈	询价
深圳市华来深电子有限公司	IS61LV2568-12T	ICSI	23+	TSSOP	8560	受权代理!全新原装现货特价热卖!	询价
深圳市能元时代电子有限公司	IS61LV2568-10T	ISSI	23+		57956	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市欧立现代科技有限公司	IS61LV2568L-8TL-TR	ISSI	24+	TSOP44	6525	全新原装现货,欢迎询购!!	询价
深圳市祥瑞智科技有限公司	IS61LV2568L-10KLI	ISSI	25+	SOJ	2000	原装现货特价热卖!!!0755-83210901	询价
京海半导体(深圳)有限公司	IS61LV2568-10KI	ISSI	25+	SOJ36	10000	原装现货假一罚十	询价

IS61LV2568芯片相关品牌

IS61LV2568规格书下载地址

IS61LV2568参数引脚图相关

IS61LV2568数据表相关新闻

IS61C1024AL-12KLI
进口代理
2022-9-21
IS61C5128AS-25TLI
进口代理
2022-8-10
IS61LV25616AL-10T现货热卖！！！！
IS61LV25616AL-10T现货热卖！！！！
2021-7-7
IS61SF12832-8.5TQ
产品属性属性值搜索类似制造商: ISSI 产品种类: 静态随机存取存储器存储容量: 4 Mbit 访问时间: 8.5 ns 最大时钟频率: 90 MHz 电源电压-最大: 3.63 V 电源电压-最小: 3.135 V 电源电流—最大值: 230 mA 最小工作温度: 0 C 最大工作温度: + 70 C 安装风格: SMD/SMT 封装 / 箱体: TQFP-100 数
2020-7-13
IS61SF12832-8.5TQ
原装正品热卖假一赔十
2020-7-13
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T
2020-1-1

DdatasheetPDF页码索引

P1
P2
P3
P4
P5
P6
P7
P8
P9
P10
P11
P12
P13
P14
P15
P16
P17
P18
P19
P20
P21
P22
P23
P24
P25
P26
P27
P28
P29
P30
P31
P32
P33
P34
P35
P36
P37
P38
P39
P40
P41
P42
P43
P44
P45
P46
P47
P48
P49
P50
P51
P52
P53
P54
P55
P56
P57
P58
P59
P60
P61
P62
P63
P64
P65
P66
P67
P68
P69
P70
P71
P72
P73
P74
P75
P76
P77
P78
P79
P80
P81
P82
P83
P84
P85
P86
P87
P88
P89
P90
P91
P92
P93
P94
P95
P96
P97
P98
P99
P100
P101
P102
P103
P104
P105
P106
P107
P108

您好,欢迎来到ic资料网！

IS61LV2568价格

IS61LV2568产品属性

IS61LV2568供应商更多...

IS61LV2568芯片相关品牌

IS61LV2568规格书下载地址

IS61LV2568参数引脚图相关

IS61LV2568数据表相关新闻

IS61C1024AL-12KLI

IS61C5128AS-25TLI

IS61LV25616AL-10T现货热卖！！！！

IS61SF12832-8.5TQ

IS61SF12832-8.5TQ

IS61LV256AH-15JI，IS61LV256AH-10T，IS61LV256AH-10TI，IS61LV256AH-12J，IS61LV2568L-12TI，IS61LV2568L-10TLI，IS61LV2568L-10K，IS61LV2568-12T，IS61LV2568-12K，IS61LV2568-15T

DdatasheetPDF页码索引