型号 功能描述 生产厂家 企业 LOGO 操作
IS42S16100C1-5TL-TR

封装/外壳:50-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 16MBIT PAR 50TSOP II 集成电路(IC) 存储器

ETC

知名厂家

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

ISSI

矽成半导体

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100C1 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURE

ISSI

矽成半导体

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

矽成半导体

512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM

文件:912.12 Kbytes Page:81 Pages

ISSI

矽成半导体

IS42S16100C1-5TL-TR产品属性

  • 类型

    描述

  • 型号

    IS42S16100C1-5TL-TR

  • 功能描述

    动态随机存取存储器 16M 1Mx16 200Mhz

  • RoHS

  • 制造商

    ISSI

  • 数据总线宽度

    16 bit

  • 组织

    1 M x 16

  • 封装/箱体

    SOJ-42

  • 存储容量

    16 MB

  • 访问时间

    50 ns

  • 电源电压-最大

    7 V

  • 电源电压-最小

    - 1 V

  • 最大工作电流

    90 mA

  • 最大工作温度

    + 85 C

  • 封装

    Tube

更新时间:2025-10-4 17:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
10+
BGA
277
ISSI
23+
50-TSOPII
209250
专业分销产品!原装正品!价格优势!
ISSI
25+
TSOP
860000
明嘉莱只做原装正品现货
ISSI
原厂封装
9800
原装进口公司现货假一赔百
ISSI Integrated Silicon Soluti
23+
50TSOP II
9000
原装正品,支持实单
ISSI, Integrated Silicon Solu
23+
50-TSOP II
7300
专注配单,只做原装进口现货
ISSI
23+
BGA
7000
ISSI
21+
TSOP
1062
只做原装正品,不止网上数量,欢迎电话微信查询!
ISSI
20+
TSOP-50
2960
诚信交易大量库存现货
ISSI
0734+
TSOP-50
1387
原装现货海量库存欢迎咨询

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