位置：首页 > IC中文资料第6152页 > IS41LV16100B
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS41LV16100B | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 |   | |
IS41LV16100B | EDO & Fast Page Mode DRAM | ISSI 矽成半导体 | | |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
封装/外壳：42-BSOJ（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC DRAM 16MBIT PARALLEL 42SOJ 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：42-BSOJ（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC DRAM 16MBIT PARALLEL 42SOJ 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：169.53 Kbytes Page：23 Pages | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor | ICSI | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IC41C16100A(S) and IC41LV16100A(S) are 1,048, 576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as shor | ICSI | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSIIC41C16100S and IC41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 2 | ICSI | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：145.13 Kbytes Page：22 Pages | ISSI 矽成半导体 | |
IS41LV16100B产品属性
- 类型
描述
- 型号
IS41LV16100B
- 制造商
ISSI
- 制造商全称
Integrated Silicon Solution, Inc
- 功能描述
1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
1923+ |
TSOP44 |
12900 |
原装进口现货库存专业工厂研究所配单供货 |
|||
ISSI |
23+ |
44-TSOPII |
1389 |
专业分销产品!原装正品!价格优势! |
|||
ISSI |
23+ |
TSOP44 |
20000 |
全新原装假一赔十 |
|||
ISSI |
2223+ |
TSOP44 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ISSI |
24+ |
TSOP44 |
5000 |
全新原装正品,现货销售 |
|||
ISSI |
23+ |
SOJ42 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ISSI |
22+ |
TSOP44 |
30000 |
十七年VIP会员,诚信经营，一手货源，原装正品可零售！ |
|||
ISSI Integrated Silicon Soluti |
22+ |
44TSOP II |
9000 |
原厂渠道,现货配单 |
|||
ISSI |
SOJ42 |
9500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ISSI |
06+ |
TSOP44 |
2590 |
全新原装进口自己库存优势 |
IS41LV16100B芯片相关品牌
IS41LV16100B规格书下载地址
IS41LV16100B参数引脚图相关
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- IS41LV16100A-50KI
- IS41LV16100A-50K
- IS41LV16100A
- IS41LV16100-60TLI
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- IS41LV16100-60TI
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IS41LV16100B数据表相关新闻
IS42S16100H-6TL
IS42S16100H-6TL
2023-5-11IS31AP2005-SLS2-TR
IS31AP2005-SLS2-TR
2022-12-16IS32LT3957A-ZLA3-TR ISSI eTSSOP-16 21+ 30K
IS32LT3957A-ZLA3-TR ISSI eTSSOP-16 21+ 30K
2022-3-31IS31FL3218-QFLS2-TR
IS31FL3218-QFLS2-TR
2021-10-11IS42S16100E-7TL公司大量原装正品现货/长期供应
瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
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瀚佳科技(深圳)有限公司 专业为工厂一站式BOM配单服务
2019-5-8
DdatasheetPDF页码索引
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