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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IS41LV16100B-50T | 1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 |   | |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word | ISSI 矽成半导体 | | ||
封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC DRAM 16MBIT PAR 44TSOP II 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
封装/外壳：44-TSOP（0.400"，10.16mm 宽） 包装：卷带（TR） 描述：IC DRAM 16MBIT PAR 44TSOP II 集成电路（IC） 存储器 | ETC 知名厂家 | ETC | | |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：145.13 Kbytes Page：22 Pages | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：145.13 Kbytes Page：22 Pages | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：145.13 Kbytes Page：22 Pages | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：145.13 Kbytes Page：22 Pages | ISSI 矽成半导体 | | ||
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 文件：145.13 Kbytes Page：22 Pages | ISSI 矽成半导体 | |
IS41LV16100B-50T产品属性
- 类型
描述
- 型号
IS41LV16100B-50T
- 功能描述
动态随机存取存储器 16M 1Mx16 50ns
- RoHS
否
- 制造商
ISSI
- 数据总线宽度
16 bit
- 组织
1 M x 16
- 封装/箱体
SOJ-42
- 存储容量
16 MB
- 访问时间
50 ns
- 电源电压-最大
7 V
- 电源电压-最小
- 1 V
- 最大工作电流
90 mA
- 最大工作温度
+ 85 C
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
2223+ |
TSOP44 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
ISSI(美国芯成) |
24+ |
7653 |
只做原装现货假一罚十!价格最低!只卖原装现货 |
||||
ISSI |
2022+ |
TSSOP44 |
15000 |
原厂代理 终端免费提供样品 |
|||
ISSI |
23+ |
44-TSOP |
9231 |
||||
ISSI |
24+ |
TSOP48 |
990000 |
明嘉莱只做原装正品现货 |
|||
ISSI |
25+ |
TSSOP |
12 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
ISSI |
1902+ |
TSOP44 |
2734 |
代理品牌 |
|||
ISD |
24+ |
SOP28 |
13718 |
只做原装 公司现货库存 |
|||
ISSI |
24+ |
SSOP |
13500 |
免费送样原盒原包现货一手渠道联系 |
|||
ISSI |
24+ |
TSOP44 |
66500 |
只做全新原装进口现货 |
IS41LV16100B-50T芯片相关品牌
IS41LV16100B-50T规格书下载地址
IS41LV16100B-50T参数引脚图相关
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- IS41LV16100B-60TLI-TR
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- IS41LV16100B
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IS41LV16100B-50T数据表相关新闻
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DdatasheetPDF页码索引
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