型号 功能描述 生产厂家&企业 LOGO 操作
IS41LV16100B-50T

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

ISSI

北京矽成

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 16MBIT PAR 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 16MBIT PAR 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:145.13 Kbytes Page:22 Pages

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:145.13 Kbytes Page:22 Pages

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:145.13 Kbytes Page:22 Pages

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:145.13 Kbytes Page:22 Pages

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:145.13 Kbytes Page:22 Pages

ISSI

北京矽成

IS41LV16100B-50T产品属性

  • 类型

    描述

  • 型号

    IS41LV16100B-50T

  • 功能描述

    动态随机存取存储器 16M 1Mx16 50ns

  • RoHS

  • 制造商

    ISSI

  • 数据总线宽度

    16 bit

  • 组织

    1 M x 16

  • 封装/箱体

    SOJ-42

  • 存储容量

    16 MB

  • 访问时间

    50 ns

  • 电源电压-最大

    7 V

  • 电源电压-最小

    - 1 V

  • 最大工作电流

    90 mA

  • 最大工作温度

    + 85 C

  • 封装

    Tube

更新时间:2025-8-8 23:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISD
24+
SOP28
13718
只做原装 公司现货库存
ISSI
24+
NA/
10
优势代理渠道,原装正品,可全系列订货开增值税票
ISSI
23+
TSOP44
20000
全新原装假一赔十
ISSI
22+
TSSOP44
100000
代理渠道/只做原装/可含税
ISSI
25+
TSSOP44
54658
百分百原装现货 实单必成
ISSI
06+
TSOP44
2590
全新原装进口自己库存优势
ISSI
存储器
TSOP44
41934
ISSI存储芯片IS41LV16100B-50TLI即刻询购立享优惠#长期有货
ISSI
24+
TSOP48
990000
明嘉莱只做原装正品现货
ISSI
23+
NA
1
专业电子元器件供应链正迈科技特价代理特价,原装元器件供应,支持开发样品
ISSI
21+
TSOP44
1321
只做原装,一定有货,不止网上数量,量多可订货!

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