型号 功能描述 生产厂家&企业 LOGO 操作
IS41LV16100B-60T

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

ISSI

北京矽成

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 16MBIT PAR 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:44-TSOP(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 16MBIT PAR 44TSOP II 集成电路(IC) 存储器

ETC

知名厂家

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:145.13 Kbytes Page:22 Pages

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:145.13 Kbytes Page:22 Pages

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:145.13 Kbytes Page:22 Pages

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:145.13 Kbytes Page:22 Pages

ISSI

北京矽成

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:145.13 Kbytes Page:22 Pages

ISSI

北京矽成

IS41LV16100B-60T产品属性

  • 类型

    描述

  • 型号

    IS41LV16100B-60T

  • 功能描述

    动态随机存取存储器 16M 1Mx16 60ns

  • RoHS

  • 制造商

    ISSI

  • 数据总线宽度

    16 bit

  • 组织

    1 M x 16

  • 封装/箱体

    SOJ-42

  • 存储容量

    16 MB

  • 访问时间

    50 ns

  • 电源电压-最大

    7 V

  • 电源电压-最小

    - 1 V

  • 最大工作电流

    90 mA

  • 最大工作温度

    + 85 C

  • 封装

    Tube

更新时间:2025-8-8 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI, Integrated Silicon Solu
23+
44-TSOP II
7300
专注配单,只做原装进口现货
ISSI, Integrated Silicon Solu
23+
44-TSOP II
7300
专注配单,只做原装进口现货
ISSI
1948+
SOP-44
6852
只做原装正品现货!或订货假一赔十!
ISSI Integrated Silicon Soluti
22+
44TSOP II
9000
原厂渠道,现货配单
GENNUM
24+
SOJ(42)
12000
专营GENNUM品牌进口原装正品假一赔十可開17增值稅票
ISSI
23+
44-TSOPII
1389
专业分销产品!原装正品!价格优势!
ISSI
2020+
TSOP2(4450)
3850
百分百原装正品 真实公司现货库存 本公司只做原装 可
ISSI Integrated Silicon Solut
25+
44-TSOP(0.400 10.16mm 宽)
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
主营ISSI
23+
TSOP
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ISSI
25+
电联咨询
7800
公司现货,提供拆样技术支持

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