型号 功能描述 生产厂家 企业 LOGO 操作
IS41LV16100B-50K

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

DESCRIPTION TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word

ISSI

矽成半导体

封装/外壳:42-BSOJ(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 16MBIT PARALLEL 42SOJ 集成电路(IC) 存储器

ETC

知名厂家

封装/外壳:42-BSOJ(0.400",10.16mm 宽) 包装:卷带(TR) 描述:IC DRAM 16MBIT PARALLEL 42SOJ 集成电路(IC) 存储器

ETC

知名厂家

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:145.13 Kbytes Page:22 Pages

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:145.13 Kbytes Page:22 Pages

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:145.13 Kbytes Page:22 Pages

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:145.13 Kbytes Page:22 Pages

ISSI

矽成半导体

1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

文件:145.13 Kbytes Page:22 Pages

ISSI

矽成半导体

IS41LV16100B-50K产品属性

  • 类型

    描述

  • 型号

    IS41LV16100B-50K

  • 功能描述

    动态随机存取存储器 16M 1Mx16 50ns

  • RoHS

  • 制造商

    ISSI

  • 数据总线宽度

    16 bit

  • 组织

    1 M x 16

  • 封装/箱体

    SOJ-42

  • 存储容量

    16 MB

  • 访问时间

    50 ns

  • 电源电压-最大

    7 V

  • 电源电压-最小

    - 1 V

  • 最大工作电流

    90 mA

  • 最大工作温度

    + 85 C

  • 封装

    Tube

更新时间:2025-9-24 14:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ISSI
24+
SOJ42
5000
原厂授权代理 价格绝对优势
ISSI/芯成
24+
SOJ42
990000
明嘉莱只做原装正品现货
ISSI
25+
SOJ-42
35
百分百原装正品 真实公司现货库存 本公司只做原装 可
ISSI
23+
SOJ
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
ISSI
2447
SOJ
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
ISSI
25+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
ISSI, Integrated Silicon Solu
23+
42-SOJ
7300
专注配单,只做原装进口现货
ISSI
23+
SOJ42
50000
全新原装正品现货,支持订货
ISSI/芯成
2450+
SOJ
6540
只做原装正品现货或订货假一赔十!
ISSI
25+23+
SOJ42
33474
绝对原装正品全新进口深圳现货

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