位置：首页 > IC中文资料第6526页 > IRLZ34
IRLZ34价格
参考价格：￥14.9168
型号：IRLZ34 品牌：Vishay 备注：这里有IRLZ34多少钱，2025年最近7天走势，今日出价，今日竞价，IRLZ34批发/采购报价，IRLZ34行情走势销售排行榜，IRLZ34报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRLZ34 | N-channel enhancement mode Logic level TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power | Philips 飞利浦 |   | |
IRLZ34 | Power MOSFET FEATURES • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | |
IRLZ34 | Power MOSFET FEATURES • Dynamic dV/dt Rating • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from V | VishayVishay Siliconix 威世威世科技公司 | | |
IRLZ34 | HEXFET POWER MOSFET Coming Soon. If you have some information on related parts, please share useful information by adding links below. | IRF | | |
IRLZ34 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V an | VishayVishay Siliconix 威世威世科技公司 | | |
IRLZ34 | Power MOSFET 文件：1.53667 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRLZ34 | Power MOSFET 文件：1.53667 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRLZ34 | Power MOSFET 文件：1.61395 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | |
IRLZ34 | HEXFET Power Mosfet 文件：294.48 Kbytes Page：4 Pages | ARTSCHIP | | |
IRLZ34 | N-channel enhancement mode Logic level TrenchMOS transistor | ETC 知名厂家 | ETC | |
IRLZ34 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
IRLZ34 | HEXFET POWER MOSFET | Infineon 英飞凌 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Logic-level gate drive • RDS(on) specified at VGS = 4 V and 5 V • 175 °C operating temperature • Fast switching • Ease of paralleling • Simple drive requirements • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swichting speed and ruggedized device design that Power MOSFETs are known for, provides the designer with a | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swichting speed and ruggedized device design that Power MOSFETs are known for, provides the designer with a | VishayVishay Siliconix 威世威世科技公司 | | ||
N-channel enhancement mode Logic level TrenchMOS transistor GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in switched mode power | Philips 飞利浦 | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p | IRF | | ||
N-Channel MOSFET Transistor • DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤35mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035廓 , ID = 30A ) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET Power MOSFET
| IRF | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035廓 , ID = 30A ) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Power MOSFET FEATURES • Dynamic dV/dt Rating • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V and 5 V • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from V | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. FEATURES • Dynamic dV/dt Rating • Logic-Level Gate Drive • RDS(on) Specified at VGS = 4 V an | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET Power MOSFET Description Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provi | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swichting speed and ruggedized device design that Power MOSFETs are known for, provides the designer with a | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Advanced process technology • Surface-mount • 175 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are Ro | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Advanced process technology • Surface-mount • 175 °C operating temperature • Fast switching • Fully avalanche rated • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are Ro | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.53667 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：1.61395 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
isc N-Channel MOSFET Transistor 文件：280.86 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor 文件：338.61 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Advanced Process Technology 文件：231.27 Kbytes Page：9 Pages | IRF | | ||
HEXFET Power MOSFET 文件：230.71 Kbytes Page：9 Pages | Infineon 英飞凌 | | ||
Advanced Process Technology 文件：231.27 Kbytes Page：9 Pages | IRF | | ||
HEXFET Power MOSFET 文件：311.7 Kbytes Page：8 Pages | IRF | | ||
HEXFET짰 Power MOSFET 文件：191.02 Kbytes Page：11 Pages | IRF | | ||
Logic-Level Gate Drive 文件：191.03 Kbytes Page：11 Pages | IRF | | ||
HEXFET짰 Power MOSFET 文件：191.02 Kbytes Page：11 Pages | IRF | | ||
Logic-Level Gate Drive 文件：191.03 Kbytes Page：11 Pages | IRF | | ||
Fast Switching 文件：298.94 Kbytes Page：11 Pages | IRF | | ||
Fast Switching 文件：298.94 Kbytes Page：11 Pages | IRF | | ||
Fast Switching 文件：298.94 Kbytes Page：11 Pages | IRF | | ||
Power MOSFET 文件：1.53667 Mbytes Page：9 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：461.62 Kbytes Page：11 Pages | VishayVishay Siliconix 威世威世科技公司 | |
IRLZ34产品属性
- 类型
描述
- 型号
IRLZ34
- 功能描述
MOSFET N-Chan 60V 30 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
23+ |
TO-220 |
65400 |
||||
IR/INFINEON |
24+ |
TO-220 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
IR |
2020+ |
TO-220 |
22000 |
全新原装正品 现货库存 价格优势 |
|||
VISHAY/威世 |
2450+ |
TO-262 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
TO-263 |
9150 |
绝对原装现货,价格低,欢迎询购! |
|||
IR |
24+ |
原厂封装 |
45000 |
IR代理原包原盒,假一罚十。最低价 |
|||
VISHAY(威世) |
24+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON |
24+ |
Tube |
75000 |
郑重承诺只做原装进口现货 |
|||
IR |
16+ |
TO-220 |
6135 |
全新原装/深圳现货库2 |
IRLZ34规格书下载地址
IRLZ34参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRM1600
- IRM-15
- IRM-10
- IRM-05-12
- IRM-05
- IRM048U
- IRM047U
- IRM046U
- IRM-03
- IRM-02
- IRM-01
- IRLZ4S
- IRLZ44ZSTRLPBF/BKN
- IRLZ44ZSTRLPBF
- IRLZ44ZSPBF
- IRLZ44ZPBF
- IRLZ44ZLPBF
- IRLZ44Z
- IRLZ44STRRPBF
- IRLZ44SPBF
- IRLZ44S
- IRLZ44PBF
- IRLZ44NSTRLPBF-CUTTAPE
- IRLZ44NSTRLPBF
- IRLZ44NSPBF
- IRLZ44NPBF
- IRLZ44N
- IRLZ44A
- IRLZ44
- IRLZ40
- IRLZ34S
- IRLZ34PBF
- IRLZ34NSTRLPBF-CUTTAPE
- IRLZ34NSTRLPBF
- IRLZ34NSPBF
- IRLZ34NPBF
- IRLZ34NLPBF
- IRLZ34N
- IRLZ34L
- IRLZ24S
- IRLZ24PBF
- IRLZ24NSTRLPBF
- IRLZ24NSPBF
- IRLZ24NPBF
- IRLZ24N
- IRLZ24LPBF
- IRLZ24L
- IRLZ24
- IRLZ14SPBF
- IRLZ14S
- IRLZ14PBF
- IRLZ14L
- IRLZ14
- IRLU9343PBF
- IRLU8743PBF
- IRLU8729PBF
- IRLU8729-701PBF
- IRLU8726PBF
- IRLU8721PBF
- IRLU8259PBF
- IRLU8256PBF
- IRLU7843PBF
- IRLU7833PBF
- IRLU7821PBF
- IRLU7807ZPBF
- IRLU3915PBF
- IRLU120
- IRLU110
- IRLU024
- IRLU014
- IRLS530
- IRLR120
- IRLR110
- IRLR024
- IRLR014
- IRLM210
- IRLL110
- IRLL014
- IRLI640
IRLZ34数据表相关新闻
IRLR7843TRPBF电子元器件配单封装TO-252-2丝印LR7843 N沟道MOS管
IRLR7843TRPBF电子元器件配单封装TO-252-2丝印LR7843 N沟道MOS管
2023-6-14IRLU024N N沟道场效应管
IRLU024NPBF，IR，TO-251，N沟道场效应管55V,65mO,17A,38W.
2023-1-27IRLZ44NPBF TO-220 INFINEON/英飞凌 场效应管(MOSFET) 原装正品 全新现货
IRLZ44NPBF TO-220 INFINEON/英飞凌 场效应管(MOSFET) 原装正品 全新现货
2022-4-14IRLZ34SPBF 原装现货
IRLZ34SPBF 可做含税，支持实单
2021-9-22IRLZ44NPBF Infineon TO-220-3 原装正品供应
IRLZ44NPBF Infineon TO-220-3 原装正品供应
2021-6-24IRLR6225TRPBF 原装正品现货
原装正品现货热卖中，焕盛达-专注原装 用芯服务；
2020-7-16
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
