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IRLZ34NLPBF中文资料
IRLZ34NLPBF数据手册规格书PDF详情
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRLZ34NL) is available for lowprofile applications.
● Logic-Level Gate Drive
● Advanced Process Technology
● Surface Mount (IRLZ34NS)
● Low-profile through-hole (IRLZ34NL)
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Lead-Free
IRLZ34NLPBF产品属性
- 类型
描述
- 型号
IRLZ34NLPBF
- 功能描述
MOSFET MOSFT 55V 30A 35mOhm 16.7nC LogLvl
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-262 |
2350 |
只做原厂渠道 可追溯货源 |
|||
IR |
24+ |
TO-262 |
501184 |
免费送样原盒原包现货一手渠道联系 |
|||
IR |
2450+ |
TO-262 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
TO-262-3 |
175 |
||||
IR |
23+ |
TO-262-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
25+23+ |
TO-262 |
28359 |
绝对原装正品全新进口深圳现货 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
IR |
23+ |
TO-262 |
30000 |
全新原装现货,价格优势 |
|||
IR |
09+ |
TO-262 |
2350 |
现货 |
|||
INFINEON |
25+ |
TO-262 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
IRLZ34NLPBF 价格
参考价格:¥4.5333
IRLZ34NLPBF 资料下载更多...
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