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IRLZ34L中文资料
IRLZ34L数据手册规格书PDF详情
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast swichting speed and ruggedized device design that Power MOSFETs are known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• Advanced Process Technology
• Surface Mount (IRLZ34S, SiHLZ34S)
• Low-Profile Through-Hole (IRLZ34L, SiHLZ34L)
• 175 °C Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Compliant to RoHS Directive 2002/95/EC
IRLZ34L产品属性
- 类型
描述
- 型号
IRLZ34L
- 功能描述
MOSFET N-CH 60V 30A TO-262
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
-
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
24+ |
TO-262 |
3000 |
只做原厂渠道 可追溯货源 |
|||
VISHAY/威世 |
2450+ |
TO-262 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
VISHAY |
25+23+ |
TO-262 |
28358 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY |
25+ |
TO262-3 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
VISHAY |
23+ |
TO-262 |
50000 |
全新原装正品现货,支持订货 |
|||
VISHAY |
21+ |
TO-262 |
10000 |
原装现货假一罚十 |
|||
VISHAY |
08+ |
TO-262 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY |
23+ |
TO-262 |
5500 |
原厂原装正品 |
|||
VISHAY |
23+ |
TO-262 |
7000 |
||||
VISHAY/威世 |
08+ |
TO-262 |
3000 |
IRLZ34L 资料下载更多...
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- SIHL540S-GE3
- SIHL540STRL-GE3
- SIHLD014
- SIHLD024
- SIHLIZ34G
- SIHLL014T
- SIHLR014
- SIHLR014TRL-GE3
- SIHLZ14STRL-GE3
- SIHLZ34
- SIHLZ34-E3
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