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IRLZ34S中文资料
IRLZ34S数据手册规格书PDF详情
Description
Third Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of
applications.
Advanced Process Technology
Surface Mount (IRLZ34S)
Low-profile through-hole (IRLZ34L)
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
IRLZ34S产品属性
- 类型
描述
- 型号
IRLZ34S
- 功能描述
MOSFET N-Chan 60V 30 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
更新时间：2025-10-9 14:00:00
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2021+ |
TO-263 |
9000 |
原装现货,随时欢迎询价 |
|||
IR |
24+ |
TO 263 |
161162 |
明嘉莱只做原装正品现货 |
|||
IR |
05+ |
原厂原装 |
1001 |
只做全新原装真实现货供应 |
|||
VISHAY/威世 |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
VISHAY |
25+ |
TO-263 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
VB |
21+ |
T0-263 |
10000 |
原装现货假一罚十 |
|||
Vishay Siliconix |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
IR |
02+ |
TO-263 |
387 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
2023+ |
5800 |
进口原装,现货热卖 |
IRLZ34S 资料下载更多...
IRLZ34S相关电子新闻
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2021-9-22
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- AZ832P2-2C-24DE
- AZ832P2-2C-3DE
- GS832018GT-200IV
- GS832032GT-250IV
- GS832036GT-150IV
- GS832036GT-166IV
- GS832036GT-200IV
- GS832118GE-250IV
- GS832132GE-150I
- GS832136GE-133
- GS832136GE-133I
- GS832136GE-150I
- GS832136GE-150IV
- GS832136GE-200I
- GS832136GE-225I
- GS832472C-200
- GS88132BGD-300
- HFB50HC20C
- HY57V561620C
- HY57V561620CT-7
- LC015
- LL103B
- MAAP-000067-SMB004
- MAAPGM0067-DIE
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