HEXFET짰 Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

AUTOMOTIVE MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

Logic-Level Gate Drive

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

Logic-Level Gate Drive

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

N-Channel Super Trench Power MOSFET

Features VDS= 100V, ID= 78 A RDS(ON)

N-Channel MOSFET

Application | « Reverse Battery protection Load switch « Power management « PWM Application

Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 17A (VGS = 10V) RDS(ON) =105mW (VGS = 10V)

The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 17A (VGS = 10V) RDS(ON) =105mW (VGS = 10V)

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 17A (VGS = 10V) RDS(ON) =105mW (VGS = 10V)

N-Channel Enhancement Mode MOSFET

Application » Adaptor « Charger « Power management o SMPS Standby Power

AUTOMOTIVE MOSFET HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

N-Channel Enhancement Mode MOSFET

Application » Adaptor « Charger « Power management o SMPS Standby Power

SMPS MOSFET

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Computer Processor

HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom

HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom

High Frequency Synchronous Buck Converters for Computer Processor Power

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom

High Frequency Synchronous Buck Converters for Computer Processor Power

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom

SMPS MOSFET

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Computer Processor

SMPS MOSFET

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Computer Processor

High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use

Benefits ● Ultra-Low Gate Impedance ● Very Low RDS(on) at 4.5V VGS ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● High Frequency Buck Converters for Computer Processor

HEXFET Power MOSFET

HEXFET Power MOSFET Applications High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fu

N-Channel MOSFET Transistor

• DESCRITION • High Frequency Synchronous Buck Converters For Computer Processor Power • FEATURES • Static drain-source on-resistance: RDS(on)≤11mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

High Frequency Synchronous Buck Converters for Computer Processor Power

Benefits • Very Low RDS(on) at 4.5V VGS • Ultra-Low Gate Impedance • Fully Characterized Avalanche Voltage and Current Applications • High Frequency Synchronous Buck Converters for Computer Processor Power • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom

High Frequency Synchronous Buck Converters for Computer Processor Power

HEXFET Power MOSFET Applications High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fu

HEXFET Power MOSFET

HEXFET Power MOSFET Applications High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free Benefits Ultra-Low Gate Impedance Fully Characterized A

HEXFET Power MOSFET

Benefits ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use ● Lead-Free

High Frequency Synchronous Buck Converters for Computer Processor Power

HEXFET Power MOSFET Applications High Frequency Synchronous Buck Converters for Computer Processor Power High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits Very Low RDS(on) at 4.5V VGS Ultra-Low Gate Impedance Fu

HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom

N-Channel MOSFET Transistor

• DESCRITION • Fast Switching • FEATURES • Static drain-source on-resistance: RDS(on)≤4mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

HEXFET Power MOSFET

Benefits ● Very Low RDS(on) at 4.5V VGS ● Ultra-Low Gate Impedance ● Fully Characterized Avalanche Voltage and Current Applications ● High Frequency Synchronous Buck Converters for Computer Processor Power ● High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom

HEXFET Power MOSFET

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and impr

AUTOMOTIVE MOSFET

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features co

60V N-Channel MOSFET

Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching VDS =100V ID(at VGS=10V)=30A RDS(ON) (at VGS=10V)

Power MOSFET(Vdss=30V, Rds(on)=0.019ohm, Id=46A??

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Logic-Level Gate Drive

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HEXFET짰 Power MOSFET

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Logic-Level Gate Drive

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采用 D-Pak 封装的 55V 单 N 通道功率 MOSFET

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