MOSFET

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 17A (VGS = 10V) RDS(ON) =105mW (VGS = 10V)

N-Channel MOSFET

文件：261.839 Kbytes Page：7 Pages

采用 D-Pak 封装的 100V 单 N 通道功率 MOSFET

HEXFET Power MOSFET

文件：158.62 Kbytes Page：10 Pages

N-Channel MOSFET Transistor

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The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 17A (VGS = 10V) RDS(ON) =105mW (VGS = 10V)

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 17A (VGS = 10V) RDS(ON) =105mW (VGS = 10V)

Logic Level Gate Drive

文件：291.13 Kbytes Page：11 Pages

HEXFET짰 Power MOSFET

文件：290.17 Kbytes Page：11 Pages

Logic Level Gate Drive

文件：291.13 Kbytes Page：11 Pages

N-Channel 100 V (D-S) MOSFET

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Logic Level Gate Drive

文件：291.13 Kbytes Page：11 Pages

200 V - 1,000 V Three Phase Bridge

200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Three Phase Bridge

200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time

Round Snap-In Aluminum Electrolytic Capaci-

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3/8 Square Drive Sockets, SAE

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Heyco® PG and Metric Threaded Plugs

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