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位置：首页 > IC中文资料 > IRL10

IRL10价格

参考价格：￥7.3361

型号：IRL1004PBF 品牌：International 备注：这里有IRL10多少钱，2026年最近7天走势，今日出价，今日竞价，IRL10批发/采购报价，IRL10行情走势销售排行榜，IRL10报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRL10

5mm Infrared LED , T-1 3/4

Descriptions • EVERLIGHT’s Infrared Emitting Diode (IR333C) is a high intensity diode , molded in a water clear plastic package. • The device is spectrally matched with phototransistor , photodiode and infrared receiver module. Features • High reliability • High radiant intensity • Peak wave

EVERLIGHT

台湾亿光

IRL1004

HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

IRF

IRL1004

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤6.5mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

IRL1004L

Advanced Process Technology Ultra Low On-Resistance

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

IRF

IRL1004LPBF

HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

IRF

IRL1004PBF

Advanced Process Technology

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

IRF

IRL1004S

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching a

ISC

无锡固电

IRL1004S

Advanced Process Technology Ultra Low On-Resistance

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

IRF

IRL1004SPBF

HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

IRF

IRL1004L

HEXFET Power MOSFET

文件：133.79 Kbytes Page：10 Pages

NSC

国半

IRL1004L

HEXFET Power MOSFET

TI

德州仪器

IRL1004LPBF

HEXFET Power MOSFET

INFINEON

英飞凌

IRL1004PBF

Advanced Process Technology

文件：164.73 Kbytes Page：9 Pages

IRF

IRL1004PBF_15

Advanced Process Technology

文件：164.73 Kbytes Page：9 Pages

IRF

IRL1004S

HEXFET Power MOSFET

文件：133.79 Kbytes Page：10 Pages

NSC

国半

IRL1004S

采用 D2-Pak 封装的 40V 单 N 通道 HEXFET 功率 MOSFET

INFINEON

英飞凌

IRL1004SPBF

Advanced Process Technology

文件：215.67 Kbytes Page：11 Pages

IRF

IRL1004SPBF_15

Advanced Process Technology

文件：215.67 Kbytes Page：11 Pages

IRF

IRL100HS121

Higher power density designs

文件：1.08655 Mbytes Page：16 Pages

INFINEON

英飞凌

IRL10产品属性

  • 类型

    描述

  • OPN：

    IRL1004PBF

  • Qualification：

    Non-Automotive

  • Package name：

    TO220

  • VDS max：

    40 V

  • RDS (on) @10V max：

    6.5 mΩ

  • RDS (on) @4.5V max：

    9 mΩ

  • ID @25°C max：

    130 A

  • QG typ @4.5V：

    66.7 nC

  • Polarity：

    N

  • VGS(th) min：

    1 V

  • Technology：

    IR MOSFET™

IRL10供应商更多...

更新时间：2026-5-24 17:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市得捷芯城科技有限公司
Irl1004pbf
Infineon(英飞凌)
25+
TO-220AB
11580
原装正品现货,原厂订货,可支持含税原型号开票。
询价
深圳市金华微盛电子有限公司
IRL1004SPBF
VBSEMI
19+
D2PAK
21000
询价
中天科工半导体（深圳）有限公司
IRL1004PBF
INFINEON/英飞凌
25+
TO220
20300
INFINEON/英飞凌原装特价IRL1004PBF即刻询购立享优惠#长期有货
询价
深圳市坤融电子科技有限公司
IRL100HS121
INFINEON/英飞凌
2025+
DFN-2x2
5000
原装进口价格优 请找坤融电子!
询价
深圳市河锋鑫科技有限公司
IRL100HS121
INFINEON/英飞凌
20+
PQFN2x2
120000
原装正品 可含税交易
询价
柒号芯城电子商务(深圳)有限公司
IRL100HS121
INFINEON
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
深圳市高捷芯城科技有限公司
Irl1004pbf
Infineon(英飞凌)
25+
TO-220AB
11580
原装正品现货,原厂订货,可支持含税原型号开票。
询价
深圳市科恒伟业电子有限公司
IRL1004S
IR
2450+
TO-263
9850
只做原装正品现货或订货假一赔十!
询价
深圳市美思瑞电子科技有限公司
IRL1004PBF
IR
22+
TO-220
9565
询价

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