5mm Infrared LED , T-1 3/4

Descriptions • EVERLIGHT’s Infrared Emitting Diode (IR333C) is a high intensity diode , molded in a water clear plastic package. • The device is spectrally matched with phototransistor , photodiode and infrared receiver module. Features • High reliability • High radiant intensity • Peak wave

HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤6.5mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Advanced Process Technology Ultra Low On-Resistance

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

Advanced Process Technology

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

Advanced Process Technology Ultra Low On-Resistance

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching a

HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

HEXFET Power MOSFET

HEXFET Power MOSFET

文件：133.79 Kbytes Page：10 Pages

HEXFET Power MOSFET

Advanced Process Technology

文件：164.73 Kbytes Page：9 Pages

Advanced Process Technology

文件：164.73 Kbytes Page：9 Pages

HEXFET Power MOSFET

文件：133.79 Kbytes Page：10 Pages

采用 D2-Pak 封装的 40V 单 N 通道 HEXFET 功率 MOSFET

Advanced Process Technology

文件：215.67 Kbytes Page：11 Pages

Advanced Process Technology

文件：215.67 Kbytes Page：11 Pages

Higher power density designs

文件：1.08655 Mbytes Page：16 Pages