型号 功能描述 生产厂家 企业 LOGO 操作
IRL1004L

Advanced Process Technology Ultra Low On-Resistance

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

IRF

IRL1004L

HEXFET Power MOSFET

文件:133.79 Kbytes Page:10 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

IRL1004L

HEXFET Power MOSFET

TI

德州仪器

HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

IRF

HEXFET Power MOSFET

Infineon

英飞凌

WILMAR??Protective Relays - 1000 Series

Phase failure relays protect motors, equipment and personnel from damage or injury caused by open phase, reversed phase sequence, or low voltage in a three phase system. Models are available for 50 and 60 Hz with voltages up to 575 volts. Motor control switchboards are a common application. Opera

MACOM

Phase Control Thyristors (Capsule Type)

Features • Metal case with ceramic insulator • High current rating • Bifacial cooled • Center gate trigger Applications • DC motor controls • AC controllers • DC power supplies

NAINA

DUAL THRU HOLE

文件:38.76 Kbytes Page:1 Pages

XFMRS

Premier Supplier of Electronic Hardware

文件:5.0379 Mbytes Page:60 Pages

ABBATRON

Brushless Fan

文件:64.31 Kbytes Page:1 Pages

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

IRL1004L产品属性

  • 类型

    描述

  • 型号

    IRL1004L

  • 功能描述

    MOSFET N-CH 40V 130A TO-262

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2025-9-25 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2016+
TO220
3029
公司只做原装,假一罚十,可开17%增值税发票!
IR
24+
TO-262
80000
只做自己库存 全新原装进口正品假一赔百 可开13%增
IR
24+
TO 262
161318
明嘉莱只做原装正品现货
IR
10+
TO-262
2450
一级代理,专注军工、汽车、医疗、工业、新能源、电力
IR
23+
TO-262
4950
原厂原装正品
IR
24+
TO-262
501172
免费送样原盒原包现货一手渠道联系
IR
24+
TO-262
8866
IR
17+
TO-220
6200
100%原装正品现货
ir
06+
TO-262
15000
原装
IR
23+
TO-262
35890

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