Advanced Process Technology Ultra Low On-Resistance

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

丝印代码：D2PAK；isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching a

HEXFET Power MOSFET

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采用 D2-Pak 封装的 40V 单 N 通道 HEXFET 功率 MOSFET

HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

Advanced Process Technology

文件：215.67 Kbytes Page：11 Pages

Advanced Process Technology

文件：215.67 Kbytes Page：11 Pages

SUPER FAST RECOVERY RECTIFIER(VOLTAGE - 200 to 600 Volts CURRENT - 10.0 Amperes)

FEATURES • For thorough hole applications • Low profile package • Built-in strain relief • Easy pick and place • Superfast recovery times for high efficiency • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • Glass passivated junction • High temperature solde

ISOLATION SUPERFAST RECOVERY RECTIFIERS(VOLTAGE - 50 to 400 Volts CURRENT - 10.0 Amperes)

VOLTAGE 50 to 600 Volts CURRENT 10 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd voltge, hig

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 800 Volts CURRENT - 10.0 Amperes)

FEATURES ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy Molding Compound ● Exceeds environmental standards of MIL-S-19500/228 ● Low power loss, high efficiency ● Low forward voltage, high current capability ● High surg

REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER

DESCRIPTION The µPB1005GS is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion RF block integrated RF/IF down-converter + PLL frequency synthesizer on 1 chip. The µPB1005GS features shrink package, fixed prescaler and supply voltage. The 30

REFERENCE FREQUENCY 16.368 MHz, 2ND IF FREQUENCY 4.092 MHz RF/IF FREQUENCY DOWN-CONVERTER PLL FREQUENCY SYNTHESIZER IC FOR GPS RECEIVER

DESCRIPTION The µPB1005K is a silicon monolithic integrated circuit for GPS receiver. This IC is designed as double conversion RF block integrated RF/IF down-converter + PLL frequency synthesizer on 1 chip. The µPB1005K features 36-pin plastic QFN, fixed prescaler and supply voltage. The