HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤6.5mΩ • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

40V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Advanced Process Technology Ultra Low On-Resistance

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

Advanced Process Technology

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel

isc N-Channel MOSFET Transistor

• FEATURES • With TO-263( D2PAK ) packaging • High speed switching • Low gate input resistance • Standard level gate drive • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • Switching a

Advanced Process Technology Ultra Low On-Resistance

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

HEXFET Power MOSFET

Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know

HEXFET Power MOSFET

文件：133.79 Kbytes Page：10 Pages

HEXFET Power MOSFET

Advanced Process Technology

文件：164.73 Kbytes Page：9 Pages

Advanced Process Technology

文件：164.73 Kbytes Page：9 Pages

采用 D2-Pak 封装的 40V 单 N 通道 HEXFET 功率 MOSFET

HEXFET Power MOSFET

文件：133.79 Kbytes Page：10 Pages

Advanced Process Technology

文件：215.67 Kbytes Page：11 Pages

Advanced Process Technology

文件：215.67 Kbytes Page：11 Pages

WILMAR??Protective Relays - 1000 Series

Phase failure relays protect motors, equipment and personnel from damage or injury caused by open phase, reversed phase sequence, or low voltage in a three phase system. Models are available for 50 and 60 Hz with voltages up to 575 volts. Motor control switchboards are a common application. Opera

Phase Control Thyristors (Capsule Type)

Features • Metal case with ceramic insulator • High current rating • Bifacial cooled • Center gate trigger Applications • DC motor controls • AC controllers • DC power supplies

Premier Supplier of Electronic Hardware

文件：5.0379 Mbytes Page：60 Pages

DUAL THRU HOLE

文件：38.76 Kbytes Page：1 Pages

Brushless Fan

文件：64.31 Kbytes Page：1 Pages