IRGS4B60KD价格

参考价格:¥8.4803

型号:IRGS4B60KD1PBF 品牌:IR 备注:这里有IRGS4B60KD多少钱,2025年最近7天走势,今日出价,今日竞价,IRGS4B60KD批发/采购报价,IRGS4B60KD行情走势销售排行榜,IRGS4B60KD报价。
型号 功能描述 生产厂家 企业 LOGO 操作

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH

文件:376.95 Kbytes Page:15 Pages

IRF

600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:442.69 Kbytes Page:16 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:442.69 Kbytes Page:16 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor

IRF

INSULATED GATE BIPOLAR TRANSISTOR

Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:325.03 Kbytes Page:14 Pages

IRF

IRGS4B60KD产品属性

  • 类型

    描述

  • 型号

    IRGS4B60KD

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    INSULATED GATE BIPOLAR TRANSISTOR WITH

更新时间:2025-11-4 20:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
22+
100000
代理渠道/只做原装/可含税
IR(国际整流器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
IR
25+
TO-263
65248
百分百原装现货 实单必成
Infineon/英飞凌
24+
TO-263
6000
全新原装深圳仓库现货有单必成
INFINEON/英飞凌
24+
TO-263
159936
明嘉莱只做原装正品现货
IR
1922+
TO-263
1017
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
22+
TO-263
12800
原装正品支持实单
IR
25+
TO-263
4500
全新原装、诚信经营、公司现货销售
IR
24+
TO263
7850
只做原装正品现货或订货假一赔十!
Infineon/英飞凌
24+
TO-263
25000
原装正品,假一赔十!

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