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IRGS4B60KD1PBF价格
参考价格：￥8.4803
型号：IRGS4B60KD1PBF 品牌：IR 备注：这里有IRGS4B60KD1PBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRGS4B60KD1PBF批发/采购报价，IRGS4B60KD1PBF行情走势销售排行榜，IRGS4B60KD1PBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGS4B60KD1PBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform | IRF |   | |
IRGS4B60KD1PBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：442.69 Kbytes Page：16 Pages | IRF | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：442.69 Kbytes Page：16 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH 文件：376.95 Kbytes Page：15 Pages | IRF | |
IRGS4B60KD1PBF产品属性
- 类型
描述
- 型号
IRGS4B60KD1PBF
- 功能描述
IGBT 晶体管 600V LO-VCEON NON PNCH THRU COPCK IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
25+23+ |
TO263 |
33236 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON/英飞凌 |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
|||
INFINEON |
23+ |
* |
8000 |
专注配单,只做原装进口现货 |
|||
INFINEON |
23+ |
* |
7000 |
||||
IR |
1923+ |
TO-263 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
|||
INFINEON/英飞凌 |
24+ |
TO-263 |
2400 |
只做原装，欢迎询价，量大价优 |
|||
Cypress Semiconductor |
2025+ |
13566 |
|||||
IR |
24+ |
TO-263-2 |
60000 |
||||
Infineon Technologies |
21+ |
D2PAK |
800 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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