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IRGS4B60K价格
参考价格：￥8.4803
型号：IRGS4B60KD1PBF 品牌：IR 备注：这里有IRGS4B60K多少钱，2025年最近7天走势，今日出价，今日竞价，IRGS4B60K批发/采购报价，IRGS4B60K行情走势销售排行榜，IRGS4B60K报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGS4B60K | INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor | IRF |   | |
IRGS4B60K | INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low | IRF | | |
IRGS4B60K | 600V Low VCEon Copack IGBT in a D2Pak package | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH 文件：376.95 Kbytes Page：15 Pages | IRF | | ||
600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：442.69 Kbytes Page：16 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：442.69 Kbytes Page：16 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：366.25 Kbytes Page：14 Pages | IRF | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V D2PAK-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：366.25 Kbytes Page：14 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：325.03 Kbytes Page：14 Pages | IRF | |
IRGS4B60K产品属性
- 类型
描述
- 型号
IRGS4B60K
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
1922+ |
TO-263 |
1017 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
24+ |
TO-263 |
159936 |
明嘉莱只做原装正品现货 |
|||
Infineon/英飞凌 |
21+ |
TO-263 |
6820 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
24+ |
TO-263 |
120000 |
绝对原装正品现货,假一罚十。 |
|||
IR |
23+ |
TO-263 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
INFINEON |
23+ |
N/A |
10000 |
原装优质现货订货渠道商 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
INFINEON/英飞凌 |
25+ |
TO-263 |
32360 |
INFINEON/英飞凌全新特价IRGS4B60KD1TRRP即刻询购立享优惠#长期有货 |
|||
IR |
25+23+ |
TO263 |
33236 |
绝对原装正品全新进口深圳现货 |
|||
Infineon/英飞凌 |
24+ |
TO-263 |
25000 |
原装正品,假一赔十! |
IRGS4B60K规格书下载地址
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DdatasheetPDF页码索引
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