IRGS4B60K价格
参考价格：￥8.4803
型号：IRGS4B60KD1PBF 品牌：IR 备注：这里有IRGS4B60K多少钱，2026年最近7天走势，今日出价，今日竞价，IRGS4B60K批发/采购报价，IRGS4B60K行情走势销售排行榜，IRGS4B60K报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGS4B60K | INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor | IRF |   | |
IRGS4B60K | INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low | IRF | | |
IRGS4B60K | 600V Low VCEon Copack IGBT in a D2Pak package | INFINEON 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perform | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor | IRF | | ||
600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package | INFINEON 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH 文件：376.95 Kbytes Page：15 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：442.69 Kbytes Page：16 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：442.69 Kbytes Page：16 Pages | IRF | | ||
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V D2PAK-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | INFINEON 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：366.25 Kbytes Page：14 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：366.25 Kbytes Page：14 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor | IRF | |
IRGS4B60K产品属性
- 类型
描述
- Switching Frequency min max：
8.0kHz 30.0kHz
- Package ：
D2PAK (TO-263)
- Voltage Class max：
600.0V
- IC(@100°) max：
6.8A
- IC(@25°) max：
12.0A
- ICpuls max：
22.0A
- Ptot max：
63.0W
- VCE(sat) ：
2.1V
- Eon ：
0.073mJ
- Eoff(Hard Switching) ：
0.047mJ
- td(on) ：
22.0ns
- tr ：
18.0ns
- td(off) ：
100.0ns
- tf ：
66.0ns
- QGate ：
18.2nC
- Ets (max)：
0.12mJ (0.13mJ)
- Moisture Sensitivity Level ：
1
- Switching Frequency ：
Gen 5 8-30 kHz
- VCE max：
600.0V
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
25+ |
TO-263 |
32360 |
INFINEON/英飞凌全新特价IRGS4B60KD1TRRP即刻询购立享优惠#长期有货 |
|||
IR |
24+ |
TO263 |
7850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
2025+ |
TO-3P |
4675 |
全新原厂原装产品、公司现货销售 |
|||
INFINEON |
23+ |
N/A |
10000 |
原装优质现货订货渠道商 |
|||
IR |
24+ |
NA |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
INFINEON/英飞凌 |
18+ |
明嘉莱只做原装正品现货 |
2510000 |
TO-263 |
|||
IR |
24+ |
TO-3P |
1070 |
||||
IR |
22+ |
TO220 |
12245 |
现货,原厂原装假一罚十! |
|||
IR |
2023+ |
TO-220AB |
50000 |
原装现货 |
|||
INFINEON/英飞凌 |
24+ |
TO220 |
39197 |
郑重承诺只做原装进口现货 |
IRGS4B60K芯片相关品牌
IRGS4B60K规格书下载地址
IRGS4B60K参数引脚图相关
- l101
- l100
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- IRH9130
- IRH8450
- IRH8250
- IRH8230
- IRH8150
- IRH8054
- IRH7450
- IRH7250
- IRH7230
- IRH7150
- IRH7130
- IRH7054
- IRH60
- IRH4230
- IRH4150
- IRH4054
- IRH3230
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DdatasheetPDF页码索引
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