位置：首页 > IC中文资料第6125页 > IRGS4B60KPBF
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGS4B60KPBF | INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor | IRF |   | |
IRGS4B60KPBF | 封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V D2PAK-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
IRGS4B60KPBF | INSULATED GATE BIPOLAR TRANSISTOR 文件：366.25 Kbytes Page：14 Pages | IRF | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：366.25 Kbytes Page：14 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Maximum Junction Temperature rated at 175°C. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Perfor | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：325.03 Kbytes Page：14 Pages | IRF | |
IRGS4B60KPBF产品属性
- 类型
描述
- 型号
IRGS4B60KPBF
- 制造商
International Rectifier
- 功能描述
600V 4.000A D2PAK - Rail/Tube
- 制造商
International Rectifier
- 功能描述
IGBT D2-PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
17+ |
TO-263 |
1000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
23+ |
TO-263 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
23+ |
TO-263 |
6000 |
原装正品，支持实单 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
专注配单,只做原装进口现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
IR |
22+ |
TO-263 |
6000 |
终端可免费供样,支持BOM配单 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
Infineon Technologies |
25+ |
TO-263-3 D?Pak(2 引线 + 接片 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IR |
23+ |
TO-263 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
23+ |
TO-263 |
8560 |
受权代理!全新原装现货特价热卖! |
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IRGS4B60KPBF规格书下载地址
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DdatasheetPDF页码索引
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