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IRGR3B60KD2TR价格
参考价格：￥6.9828
型号：IRGR3B60KD2TRLP 品牌：International 备注：这里有IRGR3B60KD2TR多少钱，2025年最近7天走势，今日出价，今日竞价，IRGR3B60KD2TR批发/采购报价，IRGR3B60KD2TR行情走势销售排行榜，IRGR3B60KD2TR报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
Drives 1 x 70W HID lamp Overview The IRPLHID2A reference design kit consists of a complete ballast solution for a 70W HID lamp. The design contains an EMI filter, low voltage power supply, active power factor correction and a ballast control circuit using the IRS2573D. This demo board is intended to help with the evalua | IRF |   | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：257.47 Kbytes Page：13 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | |
IRGR3B60KD2TR产品属性
- 类型
描述
- 型号
IRGR3B60KD2TR
- 功能描述
IGBT 模块
- RoHS
否
- 制造商
Infineon Technologies
- 产品
IGBT Silicon Modules
- 配置
Dual 集电极—发射极最大电压
- VCEO
600 V
- 集电极—射极饱和电压
1.95 V 在25
- C的连续集电极电流
230 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
445 W
- 最大工作温度
+ 125 C
- 封装/箱体
34MM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
SOT-252 |
100000 |
代理渠道/只做原装/可含税 |
|||
IR |
24+ |
NA/ |
53250 |
原装现货,当天可交货,原型号开票 |
|||
IR |
16+ |
D-Pak |
1900 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
25+ |
TO-252 |
50000 |
全新原装正品支持含税 |
|||
IR |
2450+ |
TO-252 |
6885 |
只做原装正品假一赔十为客户做到零风险!! |
|||
IR |
24+ |
TO-252 |
3664 |
只做原厂渠道 可追溯货源 |
|||
IR |
24+ |
TO-252 |
242 |
||||
Infineon(英飞凌) |
24+ |
TO-252 |
2669 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
IR |
24+ |
65230 |
|||||
IR |
24+ |
TO-252 |
90000 |
一级代理商进口原装现货、价格合理 |
IRGR3B60KD2TR芯片相关品牌
IRGR3B60KD2TR规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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