位置：首页 > IC中文资料第6307页 > IRGBC20
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGBC20 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A) Introduction Thereliabilityreportisasummaryofthetestdatacollatedsincetheimplementationofthereliabilityprogramme.Thisreportwillbeperiodicallyupdatedtypicallyonaquarterlybasis.Futurepublicationsofthisreportwillalsoincludeasappropriateadditionalinformationto | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A) Introduction Thereliabilityreportisasummaryofthetestdatacollatedsincetheimplementationofthereliabilityprogramme.Thisreportwillbeperiodicallyupdatedtypicallyonaquarterlybasis.Futurepublicationsofthisreportwillalsoincludeasappropriateadditionalinformationto | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
IRGBC20FD2 Introduction Thereliabilityreportisasummaryofthetestdatacollatedsincetheimplementationofthereliabilityprogramme.Thisreportwillbeperiodicallyupdatedtypicallyonaquarterlybasis.Futurepublicationsofthisreportwillalsoincludeasappropriateadditionalinformationto | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.0A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=6.0A) Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,applications. Thesenewshort | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.0A) ShortCircuitRatedUltraFastFastIGBT Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A) Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,applications. Thesenewshort | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A) INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShort CircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A) ShortCircuitRatedFastIGBT Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=10A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=6.5A) Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,motorcontrol,UPSandpowers | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=10A) 文件：497.6 Kbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT UFAST 600V 13A TO-220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT W/DIODE 600V 13A TO-220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IRGBC20产品属性
- 类型
描述
- 型号
IRGBC20
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO263 |
3000 |
全新原装、诚信经营、公司现货销售 |
|||
IRF |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
|||
IR |
23+ |
TO-220 |
35890 |
||||
IR/International Rectifier/国 |
21+ |
TO-263 |
560 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
1932+ |
TO-220 |
566 |
全新原装 实单必成 |
|||
IR |
23+ |
TO-263 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
|||
IR |
21+ |
TO220 |
10000 |
原装现货假一罚十 |
|||
ir |
22+ |
N/A |
6980 |
原装现货,可开13%税票 |
|||
IR |
21+ |
TO-263 |
35200 |
一级代理/放心采购 |
|||
IR |
22+ |
TO-220 |
87264 |
IRGBC20芯片相关品牌
IRGBC20规格书下载地址
IRGBC20参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRH7250
- IRH7230
- IRH7150
- IRH7130
- IRH7054
- IRH60
- IRH4230
- IRH4150
- IRH4054
- IRH3230
- IRH3150
- IRH3054
- IRGPH50
- IRGPH40
- IRGPH20
- IRGPC40
- IRGBF30
- IRGBF20
- IRGBC40
- IRGBC30FD2
- IRGBC30FD1
- IRGBC30F
- IRGBC30
- IRGBC26
- IRGBC20UD2
- IRGBC20U
- IRGBC20SD2
- IRGBC20S
- IRGBC20M-S
- IRGBC20MD2-S
- IRGBC20MD2
- IRGBC20M
- IRGBC20K-S
- IRGBC20KD2-S
- IRGBC20KD2S
- IRGBC20KD2
- IRGBC20K
- IRGBC20FD2
- IRGBC20F
- IRGB8B60KPBF
- IRGB8B60K
- IRGB6B60KPBF
- IRGB6B60KDPBF
- IRGB6B60KD
- IRGB6B60K
- IRGB5B120KDPBF
- IRGB5B120KD
- IRGB4B60KPBF
- IRGB4B60KD1PBF
- IRGB4B60KD1
- IRGB4B60K
- IRGB440U
- IRGB430UD2
- IRGB430U
- IRGB430
- IRGB420UD2
- IRGB420U
- IRGB420
- IRGB4086PBF
- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46Z
- IRFZ46S
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
IRGBC20数据表相关新闻
IRGP4266D-EPBF
IRGP4266D-EPBF
2023-12-11IRG4PC40KPBF 原装正品.仓库现货
华富芯深圳智能科技有限公司
2021-11-23IRG4PC50WPBF
属性参数值 商品目录IGBT管 集电极电流（Ic）（最大值）55A 集射极击穿电压（最大值）600V 类型- 不同Vge，Ic时的Vce（on）2.3V@15V，27A 栅极阈值电压-VGE(th)6V@250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中，焕盛达-专注原装用芯服务；
2020-7-17IRKD7104，IRKD71-04，IRKD71-06，IRKD71-08，IRKD71-16，IRKD91-04
IRKD7104，IRKD71-04，IRKD71-06，IRKD71-08，IRKD71-16，IRKD91-04
2020-1-12IRL1004STRRPBF公司大量原装正品现货/长期供应
IRL1004STRRPBF公司大量原装正品现货/长期供应
2019-5-8
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
