Short Circuit Rated Fast IGBT

Description

Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, high current applications.

Features

• Short circuit rated - 10µs @ 125°C, V GE = 15V

• Switching-loss rating includes all tail losses

• Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve