INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features

•Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short

Circuit Rated to 10µs @ 125°C, VGE= 15V

•Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

previous generation

•IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

•Industry standard D2Pak package

Benefits

•Latest generation 4 IGBTs offer highest power density motor controls possible.

•HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics

reduce noise, EMI and switching losses.

•This part replaces the IRGBC20KD2-S and IRGBC20MD2-S products.

•For hints see design tip 97003.