| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current | IRF |   | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • TO-220 is available in PbF as a Lead-Free Benefits • Benchmark Eff | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10μs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics. • Positive VCE (on) Temperature Coefficient. • Lead-Free Benefits • Benchmark Efficiency for Motor Control. • Ru | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE (on) Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free. Benefits • Benchmark Efficiency for Motor Control. • Rugged Transient Performance. • Low EMI. • Excellent Current Sharing | IRF | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IR |
2223+ |
TO-220 |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
IR |
24+ |
TO-220 |
47186 |
郑重承诺只做原装进口现货 |
|||
IR |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
IR |
25+23+ |
TO-220 |
15105 |
绝对原装正品全新进口深圳现货 |
|||
INFINEON |
21+ |
标准封装 |
263 |
保证原装正品,需要联系张小姐 13544103396 微信同号 |
|||
IR |
25+ |
原厂原封装 |
86720 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
INFINEON/英飞凌 |
2023+ |
TO-220 |
6100 |
专注全新正品,优势现货供应 |
|||
IR |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
IRG6B60K规格书下载地址
IRG6B60K参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRH7130
- IRH7054
- IRH60
- IRH4230
- IRH4150
- IRH4054
- IRH3230
- IRH3150
- IRH3054
- IRGPH50
- IRGPH40
- IRGPH20
- IRGPC40
- IRGBF30
- IRGBF20
- IRGBC40
- IRGBC30
- IRGBC20
- IRGB430
- IRGB420
- IRG6IC30U-10P
- IRG6IC30U
- IRG6I330UPBF
- IRG6I330U-168P
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- IRG6I330U-111P
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- IRG6I330U-110PIC
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- IRG6I330U110P
- IRG6I330U
- IRG6I320UPBF-119P
- IRG6I320UPBF
- IRG6I320U-119P
- IRG6I320U
- IRG6CC30U
- IRG6C330U
- IRG6C320U
- IRG6B62K
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- IRG6B330UDPBF
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- IRG630UPBF
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- IRG60N90DGB
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- IRG5W50HF06A
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- IRG5U50HH12E
- IRG5U50HF12A
- IRG5U400SD12B
- IRG5U300SD12B
- IRG5U200SD12B
- IRG5U200HF12B
- IRG5U150HF12B
- IRFZ48Z
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- IRFZ48S
- IRFZ48R
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- IRFZ48
- IRFZ46Z
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- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG6B60K数据表相关新闻
IRGP4266D-EPBF
IRGP4266D-EPBF
2023-12-11IRFZ44NSTRLPBF 原装正品.仓库现货
华富芯深圳智能科技 有限公司
2021-11-24IRG4PC40KPBF 原装正品.仓库现货
华富芯深圳智能 科技有限公司
2021-11-23IRG4PC50WPBF
属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中，焕盛达-专注原装 用芯服务；
2020-7-17IRKD7104，IRKD71-04，IRKD71-06，IRKD71-08，IRKD71-16，IRKD91-04
IRKD7104，IRKD71-04，IRKD71-06，IRKD71-08，IRKD71-16，IRKD91-04
2020-1-12
DdatasheetPDF页码索引
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