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IRG4PH30KDPBF价格
参考价格：￥12.3324
型号：IRG4PH30KDPBF 品牌：INTERNATIONAL RECTIFIER 备注：这里有IRG4PH30KDPBF多少钱，2026年最近7天走势，今日出价，今日竞价，IRG4PH30KDPBF批发/采购报价，IRG4PH30KDPBF行情走势销售排行榜，IRG4PH30KDPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PH30KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE | IRF |   | |
IRG4PH30KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：477.95 Kbytes Page：11 Pages | IRF | | |
IRG4PH30KDPBF | 封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 20A 100W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | INFINEON 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：477.95 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE | IRF | |
IRG4PH30KDPBF产品属性
- 类型
描述
- 型号
IRG4PH30KDPBF
- 功能描述
IGBT 晶体管 1200V ULTRAFAST 4-20 KHZ COPACK IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-247 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
IR |
26+ |
原厂原封装 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
IR |
23+ |
TO-247 |
8000 |
只做原装现货 |
|||
IR |
1923+ |
TO-247 |
5000 |
正品原装品质假一赔十 |
|||
IR |
23+ |
TO-247 |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon Technologies |
22+ |
TO247AC |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
原厂封装 |
65250 |
支持样品,原装现货,提供技术支持! |
|||
IR |
25+ |
TO-247 |
10000 |
原装现货假一罚十 |
|||
Infineon Technologies |
25+ |
TO-247-3 |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
IRG4PH30KDPBF规格书下载地址
IRG4PH30KDPBF参数引脚图相关
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- IRG4PF50WPBF
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- IRG4PC60UPBF
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- IRG4PC50UPBF
- IRG4PC50UDPBF
- IRG4PC50UD-EPBF
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- IRG4PC50SDPBF
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- IRG4PC50FPBF
- IRG4PC50F-EPBF
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- IRG4PC50FD-EPBF
- IRG4PC40WPBF
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- IRFZ48Z
- IRFZ48V
- IRFZ48S
- IRFZ48R
- IRFZ48N
- IRFZ48L
- IRFZ48
- IRFZ46Z
- IRFZ46S
- IRFZ46N
- IRFZ46L
- IRFZ46
- IRFZ45
- IRFZ44Z
- IRFZ44V
- IRFZ44S
- IRFZ44R
- IRFZ44N
- IRFZ44L
- IRFZ44E
IRG4PH30KDPBF数据表相关新闻
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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原装正品现货热卖中，焕盛达-专注原装 用芯服务；
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2020-1-12
DdatasheetPDF页码索引
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