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IRG4PH30价格

参考价格:¥12.3324

型号:IRG4PH30KDPBF 品牌:INTERNATIONAL RECTIFIER 备注:这里有IRG4PH30多少钱,2026年最近7天走势,今日出价,今日竞价,IRG4PH30批发/采购报价,IRG4PH30行情走势销售排行榜,IRG4PH30报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4PH30

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)

Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g

IRF

IRG4PH30

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)

Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE

IRF

IRG4PH30

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)

INFINEON

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)

Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)

Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE

IRF

INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT

Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g

IRF

1200V 超快 4-20 kHz 分立 IGBT,采用 TO-247AC 封装

INFINEON

英飞凌

1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package

INFINEON

英飞凌

封装/外壳:TO-247-3 包装:管件 描述:IGBT 1200V 20A 100W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INFINEON

英飞凌

封装/外壳:TO-247-3 包装:卷带(TR) 描述:IGBT 1200V 20A 100W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INFINEON

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:477.95 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:477.95 Kbytes Page:11 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:354.86 Kbytes Page:9 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR

文件:354.86 Kbytes Page:9 Pages

IRF

IRG4PH30产品属性

  • 类型

    描述

  • 型号

    IRG4PH30

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A)

更新时间:2026-3-17 19:31:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon Technologies
22+
TO247AC
9000
原厂渠道,现货配单
IR
24+
TO-3P
5000
只做原装正品现货 欢迎来电查询15919825718
IR
24+
TO-247
6000
全新原装深圳仓库现货有单必成
Infineon
24+
NA
3458
进口原装正品优势供应
IR
23+
TO-247
65400
IR
25+
TO-247
30000
原装正品公司现货,假一赔十!
ir
24+
N/A
6980
原装现货,可开13%税票
IR
2015+
TO-247
19889
一级代理原装现货,特价热卖!
IR
25+
TO-247
30000
全新原装现货,价格优势
IR
2450+
TO-247
9850
只做原装正品现货或订货假一赔十!

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