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IRG4PH30KPBF价格
参考价格：￥8.9514
型号：IRG4PH30KPBF 品牌：INTERNATIONAL 备注：这里有IRG4PH30KPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PH30KPBF批发/采购报价，IRG4PH30KPBF行情走势销售排行榜，IRG4PH30KPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PH30KPBF | INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g | IRF |   | |
IRG4PH30KPBF | INSULATED GATE BIPOLAR TRANSISTOR 文件：354.86 Kbytes Page：9 Pages | IRF | | |
IRG4PH30KPBF | 封装/外壳：TO-247-3 包装：卷带（TR） 描述：IGBT 1200V 20A 100W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：354.86 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous g | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HE | IRF | |
IRG4PH30KPBF产品属性
- 类型
描述
- 型号
IRG4PH30KPBF
- 功能描述
IGBT 晶体管 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
12+ |
TO-247 |
1365 |
||||
IR |
21+ |
TO-247 |
30000 |
百域芯优势 实单必成 可开13点增值税发票 |
|||
IR |
25+23+ |
TO-247 |
28607 |
绝对原装正品全新进口深圳现货 |
|||
IR |
21+ |
TO-247 |
10000 |
只做原装,质量保证 |
|||
IR |
24+ |
TO-247 |
1365 |
只做原厂渠道 可追溯货源 |
|||
Infineon |
23+ |
IRG4PH30KPBF |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
Infineon |
原厂封装 |
9800 |
原装进口公司现货假一赔百 |
||||
IR |
23+ |
TO-247 |
6000 |
原装正品，支持实单 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
Infineon(英飞凌) |
2447 |
TO-247(AC) |
105000 |
25片/管一级代理专营品牌!原装正品,优势现货,长期 |
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IRG4PH30KPBF规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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