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IRG4PF50WDPBF价格
参考价格：￥19.9216
型号：IRG4PF50WDPBF 品牌：INTERNATIONAL 备注：这里有IRG4PF50WDPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4PF50WDPBF批发/采购报价，IRG4PF50WDPBF行情走势销售排行榜，IRG4PF50WDPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4PF50WDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduct | IRF |   | |
IRG4PF50WDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：637.39 Kbytes Page：11 Pages | IRF | | |
IRG4PF50WDPBF | 封装/外壳：TO-247-3 包装：管件 描述：IGBT 900V 51A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：637.39 Kbytes Page：11 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz • Of particular benefit in single-ended converters and Power Supplies 150W and higher • | IRF | | ||
IGBT DESCRIPTION · Low Gate Drive Requirement · High Current Handling Capability · Short Circuit Capability · High Power Density APPLICATIONS · Power Inverters · Motor Drives · UPS,PFC · High Voltage Auxiliaries | ISC 无锡固电 | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduct | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Benefits • Lower switching losses allow more cost-effective operation and hence efficient replacement of larger die MOSFETs up to 100kHz • Of particular benefit in single-ended converters and Power Supplies 150W and higher • | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 900V VCE(on) typ. = 2.25V @VGE = 15V, IC = 28A Features • Optimized for use in Welding and Switch-Mode Power Supply applications • Industry benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduct | IRF | |
IRG4PF50WDPBF产品属性
- 类型
描述
- 型号
IRG4PF50WDPBF
- 功能描述
IGBT 晶体管 900V Warp 20-100kHz
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-247 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
INFINEON/英飞凌 |
24+ |
TO-247 |
9600 |
原装现货,优势供应,支持实单! |
|||
INFINEON/英飞凌 |
23+ |
TO-247 |
6000 |
原装正品，支持实单 |
|||
IR |
2023+ |
原厂原装 |
50000 |
原装现货 |
|||
IR |
23+ |
TO-247 |
8000 |
只做原装现货 |
|||
IR |
23+ |
TO-247 |
7000 |
||||
Infineon(英飞凌) |
2447 |
TO-247(AC) |
105000 |
25片/管一级代理专营品牌!原装正品,优势现货,长期 |
|||
INFINEON/英飞凌 |
24+ |
TO-247 |
3000 |
只做原厂渠道 可追溯货源 |
|||
IR(国际整流器) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
Infineon/英飞凌 |
2025+ |
TO-247(AC) |
8000 |
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IRG4PF50WDPBF规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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