IRG4PC50SDPBF价格

参考价格:¥41.6612

型号:IRG4PC50SDPBF 品牌:INTERNATIONAL RECTIFIER 备注:这里有IRG4PC50SDPBF多少钱,2026年最近7天走势,今日出价,今日竞价,IRG4PC50SDPBF批发/采购报价,IRG4PC50SDPBF行情走势销售排行榜,IRG4PC50SDPBF报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4PC50SDPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Standardd Speed CoPack IGBT

IRF

IRG4PC50SDPBF

封装/外壳:TO-247-3 包装:管件 描述:IGBT 600V 70A 200W TO247AC 分立半导体产品 晶体管 - UGBT、MOSFET - 单

INFINEON

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.45V, @Vge=15V, Ic=39A)

VCES= 600V VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.84V, @Vge=15V, Ic=30A)

Features • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C,VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generat

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.84V, @Vge=15V, Ic=30A)

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast IGBT Features ●Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz, and Short Circuit Rated to 10µs @125°C, VGE= 15V ●Generation 4 IGBT design provides tigh

IRF

INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES= 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry stan

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A)

VCES = 600V VCE(on) typ. = 1.65V @VGE = 15V, IC = 27A Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-pack

IRF

IRG4PC50SDPBF产品属性

  • 类型

    描述

  • 型号

    IRG4PC50SDPBF

  • 功能描述

    IGBT 晶体管 600V ULTRAFAST COPACK IGBT

  • RoHS

  • 制造商

    Fairchild Semiconductor

  • 配置

    集电极—发射极最大电压

  • VCEO

    650 V

  • 集电极—射极饱和电压

    2.3 V

  • 栅极/发射极最大电压

    20 V 在25

  • C的连续集电极电流

    150 A

  • 栅极—射极漏泄电流

    400 nA

  • 功率耗散

    187 W

  • 封装/箱体

    TO-247

  • 封装

    Tube

更新时间:2026-3-15 17:05:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
STM
25+
3
公司优势库存 热卖中!!
INTERNATIONALRECTIFIER
21+
NA
12820
只做原装,质量保证
INTERNATIONALRECTIFIER
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
IR
22+
TO-247
20000
公司只做原装 品质保障
IR
23+
TO-247
7000
Infineon(英飞凌)
2447
TO247COPAK
115000
400个/管一级代理专营品牌!原装正品,优势现货,长期
IR
2025+
N/A
70000
柒号只做原装 现货价秒杀全网
Infineon Technologies
24+
原装
5000
原装正品,提供BOM配单服务
Infineon Technologies
22+
TO247AC
9000
原厂渠道,现货配单
IR
23+
TO-247
8000
只做原装现货

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