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IRG4IBC30W价格
参考价格：￥4.5094
型号：IRG4IBC30WPBF 品牌：International 备注：这里有IRG4IBC30W多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4IBC30W批发/采购报价，IRG4IBC30W行情走势销售排行榜，IRG4IBC30W报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4IBC30W | INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • 2.5kV, 60s insulation voltage • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction losses • La | IRF |   | |
IRG4IBC30W | 封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 17A 45W TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
IRG4IBC30W | 600V Warp 60-150 kHz 分立 IGBT，采用 TO-220 FullPak 封装 | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • 2.5kV, 60s insulation voltage • ndustry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction | IRF | | ||
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 17A 45W TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：263.95 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：263.95 Kbytes Page：9 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Very Low 1.59V votage drop • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Very Low 1.59V votage drop • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：195.54 Kbytes Page：10 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT TECOVERY DIODE 文件：339.04 Kbytes Page：10 Pages | IRF | |
IRG4IBC30W产品属性
- 类型
描述
- 型号
IRG4IBC30W
- 功能描述
IGBT WARP 600V 17A TO-220FP
- RoHS
否
- 类别
分离式半导体产品 >> IGBT - 单路
- 系列
-
- 标准包装
30
- 系列
GenX3™ IGBT
- 类型
PT 电压 -
- 集电极发射极击穿（最大）
1200V Vge,
- Ic时的最大Vce（开）
3V @ 15V，100A 电流 -
- 集电极(Ic)（最大）
200A 功率 -
- 最大
830W
- 输入类型
标准
- 安装类型
通孔
- 封装/外壳
TO-247-3
- 供应商设备封装
PLUS247?-3
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-220F |
8560 |
受权代理!全新原装现货特价热卖! |
|||
IR |
22+ |
TO-220F |
88402 |
||||
IR |
24+ |
原厂封装 |
139 |
原装现货假一罚十 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
24+ |
NA/ |
13888 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
24+ |
TO 220F |
161521 |
明嘉莱只做原装正品现货 |
|||
IR |
05+ |
TO-220F |
308 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
05+ |
TO-220F |
333 |
||||
IR |
21+ |
TO-220 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
IR |
25+ |
TO-220F |
30000 |
代理全新原装现货,价格优势 |
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IRG4IBC30W规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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