位置:IRG4IBC30F > IRG4IBC30F详情

IRG4IBC30F中文资料

厂家型号

IRG4IBC30F

文件大小

223.94Kbytes

页面数量

10

功能描述

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

数据手册

原厂下载下载地址一下载地址二到原厂下载

生产厂商

IRF

IRG4IBC30F数据手册规格书PDF详情

Features

• Very Low 1.59V votage drop

• 2.5kV, 60s insulation voltage

• 4.8 mm creapage distance to heatsink

• Fast: Optimized for medium operating

frequencies ( 1-5 kHz in hard switching, >20

kHz in resonant mode).

• IGBT co-packaged with HEXFREDTM ultrafast,

ultrasoft recovery antiparallel diodes

• Tighter parameter distribution

• Industry standard Isolated TO-220 FullpakTM

outline

Benefits

• Simplified assembly

• Highest efficiency and power density

• HEXFREDTM antiparallel Diode minimizes

switching losses and EMI

IRG4IBC30F产品属性

  • 类型

    描述

  • 型号

    IRG4IBC30F

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

更新时间:2025-10-5 9:14:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO 220F
161189
明嘉莱只做原装正品现货
IR
22+
TO
6000
终端可免费供样,支持BOM配单
IR
23+
TO
8000
只做原装现货
IR
23+
TO
7000
IR
17+
TO220
6200
100%原装正品现货
IR
24+
TO-220FullPak
8866
ir
24+
N/A
6980
原装现货,可开13%税票
IR
2015+
TO-220F
12500
全新原装,现货库存长期供应
IR
24+
TO-220F
5000
全现原装公司现货
International Rectifier
2022+
1
全新原装 货期两周