IRG4IBC30KD价格

参考价格:¥10.3776

型号:IRG4IBC30KDPBF 品牌:International 备注:这里有IRG4IBC30KD多少钱,2025年最近7天走势,今日出价,今日竞价,IRG4IBC30KD批发/采购报价,IRG4IBC30KD行情走势销售排行榜,IRG4IBC30KD报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRG4IBC30KD

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

文件:195.54 Kbytes Page:10 Pages

IRF

IRG4IBC30KD

封装/外壳:TO-220-3 整包 包装:管件 描述:IGBT 600V 17A 45W TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

IRG4IBC30KD

600V UltraFast 8-25 kHz Copack IGBT in a TO-220 FullPak package

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast,

IRF

封装/外壳:TO-220-3 整包 包装:管件 描述:IGBT 600V 17A 45W TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单

Infineon

英飞凌

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT TECOVERY DIODE

文件:339.04 Kbytes Page:10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT TECOVERY DIODE

文件:339.04 Kbytes Page:10 Pages

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Very Low 1.59V votage drop • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery

IRF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

Features • Very Low 1.59V votage drop • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery

IRF

IRG4IBC30KD产品属性

  • 类型

    描述

  • 型号

    IRG4IBC30KD

  • 功能描述

    IGBT W/DIODE 600V 17A TO-220FP

  • RoHS

  • 类别

    分离式半导体产品 >> IGBT - 单路

  • 系列

    -

  • 标准包装

    30

  • 系列

    GenX3™ IGBT

  • 类型

    PT 电压 -

  • 集电极发射极击穿(最大)

    1200V Vge,

  • Ic时的最大Vce(开)

    3V @ 15V,100A 电流 -

  • 集电极(Ic)(最大)

    200A 功率 -

  • 最大

    830W

  • 输入类型

    标准

  • 安装类型

    通孔

  • 封装/外壳

    TO-247-3

  • 供应商设备封装

    PLUS247?-3

  • 包装

    管件

更新时间:2025-11-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
NA/
13880
优势代理渠道,原装正品,可全系列订货开增值税票
INFINEON/英飞凌
25+
TO-220F
20300
INFINEON/英飞凌原装特价IRG4IBC30KD即刻询购立享优惠#长期有货
IR
24+
TO 220F
161194
明嘉莱只做原装正品现货
IOR
2047+
TO-220F
1500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEON/英飞凌
2517+
TO-220F
8850
只做原装正品现货或订货假一赔十!
IR
18+
TO-220
85600
保证进口原装可开17%增值税发票
IR
21+
TO-220
30000
百域芯优势 实单必成 可开13点增值税
INTERNATIONALRECTIFIER
21+
NA
12820
只做原装,质量保证
IR
24+
TO-220-3
9
INTERNATIONALRECTIFIER
22+
N/A
12245
现货,原厂原装假一罚十!

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