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IRG4IBC20W价格
参考价格：￥6.1327
型号：IRG4IBC20WPBF 品牌：INTERNATIONAL 备注：这里有IRG4IBC20W多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4IBC20W批发/采购报价，IRG4IBC20W行情走势销售排行榜，IRG4IBC20W报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4IBC20W | INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • 2.5kV, 60s insulation voltage • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50 reduction of Eoff parameter • Low IGBT conduction | IRF |   | |
IRG4IBC20W | INSULATED GATE BIPOLAR TRANSISTOR 文件：215.24 Kbytes Page：8 Pages | IRF | | |
IRG4IBC20W | 封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 11.8A 34W TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
IRG4IBC20W | 600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR 文件：215.24 Kbytes Page：8 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR 文件：215.24 Kbytes Page：8 Pages | IRF | | ||
Designed expressly for Switch-Mode Power 文件：254.29 Kbytes Page：8 Pages | IRF | | ||
封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 12A 34W TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | ||
Designed expressly for Switch-Mode Power 文件：254.29 Kbytes Page：8 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Very Low 1.66V votage drop • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Very Low 1.66V votage drop • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：301.23 Kbytes Page：10 Pages | IRF | |
IRG4IBC20W产品属性
- 类型
描述
- 型号
IRG4IBC20W
- 功能描述
IGBT WARP 600V 11.8A TO-220FP
- RoHS
否
- 类别
分离式半导体产品 >> IGBT - 单路
- 系列
-
- 标准包装
30
- 系列
GenX3™ IGBT
- 类型
PT 电压 -
- 集电极发射极击穿（最大）
1200V Vge,
- Ic时的最大Vce（开）
3V @ 15V，100A 电流 -
- 集电极(Ic)（最大）
200A 功率 -
- 最大
830W
- 输入类型
标准
- 安装类型
通孔
- 封装/外壳
TO-247-3
- 供应商设备封装
PLUS247?-3
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
5446 |
原装现货,当天可交货,原型号开票 |
|||
IR |
24+ |
TO 220F |
161198 |
明嘉莱只做原装正品现货 |
|||
IR |
21+ |
TO-220 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
IR |
24+ |
TO-220F |
52 |
只做原厂渠道 可追溯货源 |
|||
IR |
24+ |
TO-220-3 |
563 |
||||
IR |
17+ |
TO-220 |
6200 |
100%原装正品现货 |
|||
Infineon Technologies |
23+ |
TO220AB FullPak |
9000 |
原装正品，支持实单 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
IR |
1923+ |
TO-220 |
5000 |
正品原装品质假一赔十 |
IRG4IBC20W芯片相关品牌
IRG4IBC20W规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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