Features

• High switching speed optimized for up to 25kHz

with low VCE(on)

• Short Circuit Rating 10µs @ 125°C, VGE = 15V

• Generation 4 IGBT design provides tighter

parameter distribution and higher efficiency than

previous generation

• IGBT co-packaged with HEXFREDTM ultrafast,

ultra-soft-recovery anti-parallel diodes for use in

bridge configurations

• Industry standard TO-220 FULLPAK

• Lead-Free

Benefits

• Generation 4 IGBTs offer highest efficiencies available

maximizing the power density of the system

• IGBTs optimized for specific application conditions

• HEXFREDTM diodes optimized for performance with IGBTs.

Minimized recovery characteristics reduce noise EMI

• Designed to exceed the power handling capability of

equivalent industry-standard IGBTs