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IRG4IBC20FDPBF价格
参考价格：￥9.9999
型号：IRG4IBC20FDPBF 品牌：International 备注：这里有IRG4IBC20FDPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4IBC20FDPBF批发/采购报价，IRG4IBC20FDPBF行情走势销售排行榜，IRG4IBC20FDPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4IBC20FDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Very Low 1.66V votage drop • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel | IRF |   | |
IRG4IBC20FDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：301.23 Kbytes Page：10 Pages | IRF | | |
IRG4IBC20FDPBF | 封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 14.3A 34W TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：301.23 Kbytes Page：10 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Very Low 1.66V votage drop • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, | IRF | |
IRG4IBC20FDPBF产品属性
- 类型
描述
- 型号
IRG4IBC20FDPBF
- 功能描述
IGBT 晶体管 600V Fast 1-8kHz
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO220FP |
6000 |
原装正品，支持实单 |
|||
INFINEON/英飞凌 |
2447 |
TO-220FP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
INFINEON/英飞凌 |
2450+ |
NA |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
IR |
24+ |
TO-220-3 |
373 |
||||
Infineon |
24+ |
NA |
3151 |
进口原装正品优势供应 |
|||
INFINEON/IR |
24+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
|||
INFINEON/IR |
10+ |
1350 |
TO-220FP |
||||
IR |
17+ |
TO-220 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Infineon Technologies |
25+ |
30000 |
原装现货,支持实单 |
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IRG4IBC20FDPBF规格书下载地址
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DdatasheetPDF页码索引
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