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IRG4IBC20KDPBF价格
参考价格：￥9.6050
型号：IRG4IBC20KDPBF 品牌：International 备注：这里有IRG4IBC20KDPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4IBC20KDPBF批发/采购报价，IRG4IBC20KDPBF行情走势销售排行榜，IRG4IBC20KDPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4IBC20KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, | IRF |   | |
IRG4IBC20KDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：349.21 Kbytes Page：10 Pages | IRF | | |
IRG4IBC20KDPBF | 封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 11.5A 34W TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：349.21 Kbytes Page：10 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Very Low 1.66V votage drop • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Very Low 1.66V votage drop • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：301.23 Kbytes Page：10 Pages | IRF | |
IRG4IBC20KDPBF产品属性
- 类型
描述
- 型号
IRG4IBC20KDPBF
- 功能描述
IGBT 晶体管 600V UltraFast 8-25kHz
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
25+ |
5000 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||||
IR |
17+ |
TO-220 |
25000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
21+ |
TO-220 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
IR |
24+ |
TO-220F |
60000 |
全新原装现货 |
|||
IR |
24+ |
原厂封装 |
2000 |
原装现货假一罚十 |
|||
IR |
23+ |
TO-220F |
50000 |
全新原装正品现货,支持订货 |
|||
Infineon Technologies |
24+ |
原装 |
5000 |
原装正品,提供BOM配单服务 |
|||
IR |
23+ |
TO-220F |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
2015+ |
TO-220F |
12500 |
全新原装,现货库存长期供应 |
|||
IR |
1923+ |
TO-220 |
5000 |
正品原装品质假一赔十 |
IRG4IBC20KDPBF芯片相关品牌
IRG4IBC20KDPBF规格书下载地址
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属性 参数值 商品目录 IGBT管 集电极电流（Ic）（最大值） 55A 集射极击穿电压（最大值） 600V 类型 - 不同 Vge，Ic 时的 Vce（on） 2.3V @ 15V，27A 栅极阈值电压-VGE(th) 6V @ 250uA
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DdatasheetPDF页码索引
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