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IRG4IBC20UDPBF价格
参考价格：￥5.8218
型号：IRG4IBC20UDPBF 品牌：International 备注：这里有IRG4IBC20UDPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRG4IBC20UDPBF批发/采购报价，IRG4IBC20UDPBF行情走势销售排行榜，IRG4IBC20UDPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRG4IBC20UDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes • Tighte | IRF |   | |
IRG4IBC20UDPBF | 2.5kV, 60s insulation voltage 文件：312.3 Kbytes Page：10 Pages | IRF | | |
IRG4IBC20UDPBF | 封装/外壳：TO-220-3 整包 包装：管件 描述：IGBT 600V 11.4A 34W TO220FP 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | Infineon 英飞凌 | | |
2.5kV, 60s insulation voltage 文件：312.3 Kbytes Page：10 Pages | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Very Low 1.66V votage drop • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Very Low 1.66V votage drop • 2.5kV, 60s insulation voltage • 4.8 mm creapage distance to heatsink • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE(on) • Short Circuit Rating 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFREDTM ultrafast, | IRF | | ||
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：301.23 Kbytes Page：10 Pages | IRF | |
IRG4IBC20UDPBF产品属性
- 类型
描述
- 型号
IRG4IBC20UDPBF
- 功能描述
IGBT 晶体管 600V UltraFast 8-60kHz
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220F |
9600 |
原装现货,优势供应,支持实单! |
|||
Infineon Technologies |
23+ |
TO220AB FullPak |
9000 |
原装正品，支持实单 |
|||
INFINEON/英飞凌 |
2447 |
TO-220FP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
23+ |
TO-220 |
8000 |
只做原装现货 |
|||
IR |
23+ |
TO-220 |
7000 |
||||
IR |
24+ |
TO-220F |
43200 |
郑重承诺只做原装进口现货 |
|||
IR |
24+ |
TO-220-3 |
247 |
||||
IR |
1923+ |
TO-220 |
5000 |
正品原装品质假一赔十 |
|||
IR |
23+ |
TO-220F |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IR |
25+ |
TO-220F |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
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