位置：首页 > IC中文资料 > IRG4IBC20RD
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •VeryLow1.66Vvotagedrop •2.5kV,60sinsulationvoltage •4.8mmcreapagedistancetoheatsink •Fast:Optimizedformediumoperating frequencies(1-5kHzinhardswitching,>20 kHzinresonantmode). •IGBTco-packagedwithHEXFREDTMultrafast, ultrasoftrecovery | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •VeryLow1.66Vvotagedrop •2.5kV,60sinsulationvoltage •4.8mmcreapagedistancetoheatsink •Fast:Optimizedformediumoperatingfrequencies(1-5kHzinhardswitching,>20kHzinresonantmode). •IGBTco-packagedwithHEXFREDTMultrafast,ultrasoftrecoveryantiparallel | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •Highswitchingspeedoptimizedforupto25kHz withlowVCE(on) •ShortCircuitRating10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgeneration •IGBTco-packagedwithHEXFREDTMultrafast, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •Highswitchingspeedoptimizedforupto25kHz withlowVCE(on) •ShortCircuitRating10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighter parameterdistributionandhigherefficiencythan previousgeneration •IGBTco-packagedwithHEXFREDTMultrafast, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE 文件：301.23 Kbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR原装 |
22+23+ |
TO-220 |
23774 |
绝对原装正品全新进口深圳现货 |
|||
IR |
2018+ |
26976 |
代理原装现货/特价热卖! |
||||
IR |
24+ |
TO 220F |
161295 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
VISHAY-威世 |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
IR |
2023+ |
TO-220 |
4675 |
全新原厂原装产品、公司现货销售 |
|||
Infineon Technologies |
24+ |
TO-220-3 整包 |
9350 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
IR |
22+ |
TO-220FullPak |
25000 |
只做原装进口现货,专注配单 |
|||
IR |
2024+实力库存 |
TO-220 |
32 |
只做原厂渠道 可追溯货源 |
IRG4IBC20RD芯片相关品牌
IRG4IBC20RD规格书下载地址
IRG4IBC20RD参数引脚图相关
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IRG4IBC20RD数据表相关新闻
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属性参数值 商品目录IGBT管 集电极电流（Ic）（最大值）55A 集射极击穿电压（最大值）600V 类型- 不同Vge，Ic时的Vce（on）2.3V@15V，27A 栅极阈值电压-VGE(th)6V@250uA
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原装正品现货热卖中，焕盛达-专注原装用芯服务；
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元器件优质供应
2019-11-1
DdatasheetPDF页码索引
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