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IRFZ44V价格
参考价格：￥2.0864
型号：IRFZ44VPBF 品牌：International 备注：这里有IRFZ44V多少钱，2024年最近7天走势，今日出价，今日竞价，IRFZ44V批发/采购报价，IRFZ44V行情走势销售排行榜，IRFZ44V报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFZ44V | 60A 60V N CHANNEL POWER MOSFET FEATURES ♦LowONResistance ♦LowGateCharge ♦PeakCurrentvsPulseWidthCurve ♦InductiveSwitchingCurves APPLICATION ♦DCmotorcontrol ♦UPS ♦ClassDAmplifier | FCI Amphenol ICC |  |   |
IRFZ44V | Power MOSFET(Vdss=60V, Rds(on)=16.5mw, Id=55A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRFZ44V | N-CHANNEL Power MOSFET FEATURES ♦LowONResistance ♦LowGateCharge ♦PeakCurrentvsPulseWidthCurve ♦InductiveSwitchingCurves APPLICATION ♦DCmotorcontrol ♦UPS ♦ClassDAmplifier | SUNTACSuntac Electronic Corp. Suntac Electronic Corp. |  | |
IRFZ44V | N-Channel MOSFET Transistor 文件：338.23 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Ultra Low On-Resistance Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | KERSEMI Kersemi Electronic Co., Ltd. |  | | |
Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A ) Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A ) Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A) Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowonresistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpro | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A ) Description ThisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalancherating.Thesefeaturescom | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
ADVANCED PROCESS TECHNOLOGY 文件：232.1 Kbytes Page：8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
ADVANCED PROCESS TECHNOLOGY 文件：232.1 Kbytes Page：8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-Channel MOSFET Transistor 文件：338.55 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
ADVANCED PROCESS TECHNOLOGY 文件：378.2 Kbytes Page：12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
ADVANCED PROCESS TECHNOLOGY 文件：378.2 Kbytes Page：12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor 文件：299.42 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
IRFZ44V产品属性
- 类型
描述
- 型号
IRFZ44V
- 制造商
International Rectifier
- 功能描述
MOSFET N TO-220
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
21+ |
TO-220 |
17448 |
全新、原装 |
|||
IR |
21+ |
TO-220 |
4000 |
原厂订货价格优势,可开13%的增值税票 |
|||
IR |
23+ |
TO-220 |
20540 |
保证进口原装现货假一赔十 |
|||
IR |
2020+ |
TO220 |
350000 |
100%进口原装正品公司现货库存 |
|||
IR |
2016+ |
TO220F |
6528 |
只做进口原装现货!假一赔十! |
|||
IR |
12+13+ |
TO-220 |
516 |
只做原装正品 |
|||
IR |
TO220 |
68900 |
原包原标签100%进口原装常备现货! |
||||
IR |
21+ |
TO-220 |
60000 |
原装正品进口现货 |
|||
IR |
23+ |
TO-220 |
19526 |
||||
IR |
22+ |
TO-220 |
4633 |
只做原装进口 免费送样!! |
IRFZ44V芯片相关品牌
IRFZ44V规格书下载地址
IRFZ44V参数引脚图相关
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IRFZ44V数据表相关新闻
IRFZ44NSTRLPBF 原装正品.仓库现货
华富芯深圳智能科技有限公司
2021-11-24IRG4PC40KPBF 原装正品.仓库现货
华富芯深圳智能科技有限公司
2021-11-23IRFZ44NPBF原装现货
IRFZ44NPBF原装正品
2021-8-10IRG4PC50WPBF
属性参数值 商品目录IGBT管 集电极电流（Ic）（最大值）55A 集射极击穿电压（最大值）600V 类型- 不同Vge，Ic时的Vce（on）2.3V@15V，27A 栅极阈值电压-VGE(th)6V@250uA
2020-10-27IRGB15B60KDPBF IR全新正品现货
原装正品现货热卖中，焕盛达-专注原装用芯服务；
2020-7-17IRFZ44NPBF选拓亿芯电子，国际电子元器件供应商
元器件优质供应
2019-11-1
DdatasheetPDF页码索引
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