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位置：首页 > IC中文资料第1979页 > IRFZ44V

IRFZ44V价格

参考价格：￥2.0864

型号：IRFZ44VPBF 品牌：International 备注：这里有IRFZ44V多少钱，2026年最近7天走势，今日出价，今日竞价，IRFZ44V批发/采购报价，IRFZ44V行情走势销售排行榜，IRFZ44V报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFZ44V

60A 60V N CHANNEL POWER MOSFET

FEATURES ♦ Low ON Resistance ♦ Low Gate Charge ♦ Peak Current vs Pulse Width Curve ♦ Inductive Switching Curves APPLICATION ♦ DC motor control ♦ UPS ♦ Class D Amplifier

FCI

富加宜

IRFZ44V

Power MOSFET(Vdss=60V, Rds(on)=16.5mw, Id=55A)

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRFZ44V

N-CHANNEL Power MOSFET

FEATURES ♦ Low ON Resistance ♦ Low Gate Charge ♦ Peak Current vs Pulse Width Curve ♦ Inductive Switching Curves APPLICATION ♦ DC motor control ♦ UPS ♦ Class D Amplifier

SUNTAC

IRFZ44V

N-Channel MOSFET Transistor

文件：338.23 Kbytes Page：2 Pages

ISC

无锡固电

IRFZ44V

N-CHANNEL Power MOSFET

SUNTAC

IRFZ44V

Mosfet

FCI

富加宜

IRFZ44V

采用 TO-220AB 封装的 60V 单 N 通道 HEXFET 功率 MOSFET

INFINEON

英飞凌

IRFZ44VL

Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ44VLPBF

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ44VPBF

Ultra Low On-Resistance

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRFZ44VPBF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

KERSEMI

IRFZ44VS

Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ44VSPBF

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ44VZ

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A)

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRFZ44VZL

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A)

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRFZ44VZLPBF

HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A )

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

IRF

IRFZ44VZPBF

HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A )

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

IRF

IRFZ44VZS

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A)

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRFZ44VZSPBF

HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A )

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

IRF

IRFZ44VPBF

ADVANCED PROCESS TECHNOLOGY

文件：232.1 Kbytes Page：8 Pages

IRF

IRFZ44VPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：232.1 Kbytes Page：8 Pages

IRF

IRFZ44VZ

N-Channel MOSFET Transistor

文件：338.55 Kbytes Page：2 Pages

ISC

无锡固电

IRFZ44VZPBF

ADVANCED PROCESS TECHNOLOGY

文件：378.2 Kbytes Page：12 Pages

IRF

IRFZ44VZPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：378.2 Kbytes Page：12 Pages

IRF

IRFZ44VZS

Isc N-Channel MOSFET Transistor

文件：299.42 Kbytes Page：2 Pages

ISC

无锡固电

IRFZ44V产品属性

  • 类型

    描述

  • 型号

    IRFZ44V

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220

IRFZ44V供应商更多...

更新时间：2026-1-27 22:11:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市明嘉莱科技有限公司
IRFZ44VSTRLPBF
INFINEON/英飞凌
25+
D2-PAK(TO-263)
56890
明嘉莱只做原装正品现货
询价
深圳市润联芯城科技有限公司
IRFZ44VPBF
IR
12+13+
TO-220
516
只做原装正品
询价
深圳市赛尔通科技有限公司
IRFZ44VPBF
IR
23+
TO-220AB
65400
询价
深圳市富利微电子科技有限公司
IRFZ44VPBF
IR
25+
TO-220
20540
保证进口原装现货假一赔十
询价
深圳市星宇佳科技有限公司
IRFZ44VSPBF
39
263
IR
12
92
询价
深圳市科恒伟业电子有限公司
IRFZ44VPBF
IR
24+
TO-220
8500
只做原装正品假一赔十为客户做到零风险!!
询价
深圳市欧立现代科技有限公司
IRFZ44VPBF
IRF
24+
TO-220
9518
绝对原装现货,价格低,欢迎询购!
询价
深圳市祥瑞智科技有限公司
IRFZ44VPBF
INFINEON
25+
TO-220
12000
原装正品!!!优势库存!0755-83210901
询价
深圳市美思瑞电子科技有限公司
IRFZ44VZS
IR
22+
D2-PAK
9450
原装正品，实单请联系
询价
深圳市金华微盛电子有限公司
IRFZ44V
IR
19+
TO-220
20170
询价

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