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位置：首页 > IC中文资料第1979页 > IRFZ44V

IRFZ44V价格

参考价格：￥2.0864

型号：IRFZ44VPBF 品牌：International 备注：这里有IRFZ44V多少钱，2025年最近7天走势，今日出价，今日竞价，IRFZ44V批发/采购报价，IRFZ44V行情走势销售排行榜，IRFZ44V报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRFZ44V

60A 60V N CHANNEL POWER MOSFET

FEATURES ♦ Low ON Resistance ♦ Low Gate Charge ♦ Peak Current vs Pulse Width Curve ♦ Inductive Switching Curves APPLICATION ♦ DC motor control ♦ UPS ♦ Class D Amplifier

FCI

富加宜

IRFZ44V

Power MOSFET(Vdss=60V, Rds(on)=16.5mw, Id=55A)

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRFZ44V

N-CHANNEL Power MOSFET

FEATURES ♦ Low ON Resistance ♦ Low Gate Charge ♦ Peak Current vs Pulse Width Curve ♦ Inductive Switching Curves APPLICATION ♦ DC motor control ♦ UPS ♦ Class D Amplifier

SUNTAC

IRFZ44V

N-Channel MOSFET Transistor

文件：338.23 Kbytes Page：2 Pages

ISC

无锡固电

IRFZ44V

N-CHANNEL Power MOSFET

SUNTAC

IRFZ44V

Mosfet

FCI

富加宜

IRFZ44V

采用 TO-220AB 封装的 60V 单 N 通道 HEXFET 功率 MOSFET

Infineon

英飞凌

IRFZ44VL

Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ44VLPBF

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ44VPBF

Ultra Low On-Resistance

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

IRF

IRFZ44VPBF

Advanced Process Technology

Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, p

KERSEMI

IRFZ44VS

Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ44VSPBF

HEXFET Power MOSFET

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

IRF

IRFZ44VZ

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A)

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRFZ44VZL

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A)

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRFZ44VZLPBF

HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A )

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

IRF

IRFZ44VZPBF

HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A )

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

IRF

IRFZ44VZS

Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=57A)

Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and impro

IRF

IRFZ44VZSPBF

HEXFET짰 Power MOSFET ( VDSS = 60V , RDS(on) = 12m廓 , ID = 57A )

Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features com

IRF

IRFZ44VPBF

ADVANCED PROCESS TECHNOLOGY

文件：232.1 Kbytes Page：8 Pages

IRF

IRFZ44VPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：232.1 Kbytes Page：8 Pages

IRF

IRFZ44VZ

N-Channel MOSFET Transistor

文件：338.55 Kbytes Page：2 Pages

ISC

无锡固电

IRFZ44VZPBF

ADVANCED PROCESS TECHNOLOGY

文件：378.2 Kbytes Page：12 Pages

IRF

IRFZ44VZPBF_15

ADVANCED PROCESS TECHNOLOGY

文件：378.2 Kbytes Page：12 Pages

IRF

IRFZ44VZS

Isc N-Channel MOSFET Transistor

文件：299.42 Kbytes Page：2 Pages

ISC

无锡固电

IRFZ44V产品属性

  • 类型

    描述

  • 型号

    IRFZ44V

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220

IRFZ44V供应商更多...

更新时间：2025-11-27 16:47:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市富利微电子科技有限公司
IRFZ44VPBF
IR
24+
TO-220
20540
保证进口原装现货假一赔十
询价
深圳市祥瑞智科技有限公司
IRFZ44VPBF
INFINEON
25+
TO-220
12000
原装正品!!!优势库存!0755-83210901
询价
深圳市福田区绿盛电子商行
IRFZ44V
IR
2015+
TO-220
19889
一级代理原装现货,特价热卖!
询价
深圳市一线半导体有限公司
IRFZ44V
IR
24+
TO-220AB
8866
询价
深圳市高捷芯城科技有限公司
IRFZ44VZSPBF
Infineon(英飞凌)
24+
TO-263
7828
支持大陆交货,美金交易。原装现货库存。
询价
深圳市星佑电子有限公司
IRFZ44V
IR
原厂原装
2000
自己公司全新库存绝对有货
询价
深圳市拓亿芯电子有限公司
IRFZ44V
IR
25+
TO-220
30000
代理全新原装现货,价格优势
询价
深圳市金华微盛电子有限公司
IRFZ44V
IR
19+
TO-220
20170
询价
深圳市威雅利发展有限公司
IRFZ44V
IR
02+
TO-220
156
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
深圳市昌和盛利电子有限公司
IRFZ44V
IR
NEW
TO-220
19526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价

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