Power MOSFET(Vdss=-100V, Rds(on)=0.60ohm, Id=-5.6A)

DESCRIPTION Third Generation HEXFETs from Internatioal Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9120) • Straight Lead

5.6A, 100V, 0.600 Ohm, P-Channel Power MOSFETs

These advanced power MOSFETs are designed, tested, and guaranteed to withstand a specific level of energy in the avalanche breakdown mode of operation. They are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Dynamic dV/dt Rating

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9120, SiHFR9120) • Straight lead (IRFU9120, SiHFU9120) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

-100V P-Channel Enhancement Mode MOSFET

General Features Vbs =-100V,Ip =-8A Rosin)

-100V P-Channel Enhancement Mode MOSFET

General Features VDS=-100V,ID=-8A RDS(ON)

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -5.6A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

isc P-Channel MOSFET Transistor

文件：321.56 Kbytes Page：2 Pages

Power MOSFET

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9120, SiHFR9120) • Straight lead (IRFU9120, SiHFU9120) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

-100V P-Channel Enhancement Mode MOSFET

General Features VDS=-100V,ID=-8A RDS(ON)

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -6.6A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.48Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

Ultra Low On-Resistance

Description The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

ULTRA LOW ON-RESISTANCE

HEXFET® Power MOSFET

HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48廓 , ID = -6.6A )

HEXFET® Power MOSFET

-100V P-Channel Enhancement Mode MOSFET

General Features Vbs =-100V,Ip =-8A Rosin)

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Dynamic dV/dt Rating

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Dynamic dV/dt Rating

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Dynamic dV/dt Rating

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

P-channel Enhancement Mode Power MOSFET

Features  VDS= -100V, ID= -18A RDS(ON)

Power MOSFET

DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Dynamic dV/dt Rating

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st

-100V 单个 P 通道 HEXFET Power MOSFET, 采用 D-Pak 封装

Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A)

文件：117.52 Kbytes Page：10 Pages

ULTRA LOW ON RESISTANCE

文件：263.29 Kbytes Page：11 Pages

ULTRA LOW ON RESISTANCE

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Ultra Low On-Resistance

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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Power MOSFET

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INSTRUMENTATION HANDLES

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Programmable DC Power Supplies

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40A200V N-CHANNEL MOSFET

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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P-CHANNEL ENHANCEMENT MODE POWER MOSFET

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