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IRFR9120TR价格
参考价格：￥2.6679
型号：IRFR9120TRLPBF 品牌：Vishay 备注：这里有IRFR9120TR多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR9120TR批发/采购报价，IRFR9120TR行情走势销售排行榜，IRFR9120TR报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR9120TR | Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
IRFR9120TR | Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Dynamic dV/dt Rating DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -100V, ID= -18A RDS(ON) | Bychip 百域芯 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET 文件：1.18471 Mbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：1.18471 Mbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：1.18471 Mbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：1.18471 Mbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET 文件：1.18471 Mbytes Page：13 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
INSTRUMENTATION HANDLES 文件：86.3 Kbytes Page：1 Pages | KEYSTONE Keystone Electronics Corp. | | ||
40A200V N-CHANNEL MOSFET 文件：441.69 Kbytes Page：8 Pages | KIA 可易亚半导体 | | ||
Programmable DC Power Supplies 文件：800.12 Kbytes Page：3 Pages | BK B&K Precision Corporation | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：68.73 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | | ||
P-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件：68.73 Kbytes Page：5 Pages | A-POWER 富鼎先进电子 | |
IRFR9120TR产品属性
- 类型
描述
- 型号
IRFR9120TR
- 功能描述
MOSFET P-Chan 100V 5.6 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
98+ |
TO252 |
357 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
24+ |
NA/ |
156 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
24+ |
TO252 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
IR |
1948+ |
TO-252 |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
IR |
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
|||
IOR |
25+23+ |
TO252 |
7617 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY/威世 |
24+ |
2160 |
只做原厂渠道 可追溯货源 |
||||
IR |
24+ |
TO-252 |
36800 |
||||
VISHAY(威世) |
24+ |
TO-252 |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IOR |
22+ |
TO252 |
5000 |
全新原装现货!自家库存! |
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IRFR9120TR规格书下载地址
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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