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IRFR9024TR价格
参考价格：￥3.4325
型号：IRFR9024TRLPBF 品牌：VISHAY 备注：这里有IRFR9024TR多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR9024TR批发/采购报价，IRFR9024TR行情走势销售排行榜，IRFR9024TR报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR9024TR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世科技威世科技半导体 |   | |
IRFR9024TR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -60V, ID= -30A RDS(ON) | Bychip 百域芯 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET 文件：4.49216 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：4.49216 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：4.49216 Mbytes Page：7 Pages | KERSEMI | | ||
P-Channel 60-V (D-S) MOSFET 文件：1.02798 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：4.49216 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：4.49216 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：4.49216 Mbytes Page：7 Pages | KERSEMI | | ||
INSULATED PC SPACERS/SUPPORTS INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | | ||
Military Managed 24-Port 1G Ethernet Router/Switch FEATURES DESCRIPTION Ethernet is becoming the standard for IP-based components in military and commercial applications on land, sea and air platforms. The MILTECH9024 is specifically designed for battlefield C4ISR, voice, video, sensor data acquisition and communications in platforms that ha | ENERCON | | ||
Snap Rivets 文件：152.09 Kbytes Page：2 Pages | HeycoHeyco. 海科 | | ||
Snap Rivets 文件：152.09 Kbytes Page：2 Pages | HeycoHeyco. 海科 | | ||
Cooper-Wheelock AS/AH Serles 文件：240.06 Kbytes Page：4 Pages | GAMEWELL-FCI 霍尼韦尔 | |
IRFR9024TR产品属性
- 类型
描述
- 型号
IRFR9024TR
- 功能描述
MOSFET P-Chan 60V 8.8 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
05+ |
TO-252 |
2000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
24+/25+ |
314 |
原装正品现货库存价优 |
||||
IR |
2016+ |
TO252 |
6528 |
只做进口原装现货!假一赔十! |
|||
IR |
24+ |
TO-252 |
500996 |
免费送样原盒原包现货一手渠道联系 |
|||
Vishay(威世) |
24+ |
TO-252 |
24170 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
IR |
23+ |
SMD-DPAK |
9888 |
专做原装正品,假一罚百! |
|||
IR |
23+ |
D-PAK |
19526 |
||||
IOR |
25+ |
TO252 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
24+ |
TO-252 |
6400 |
新进库存/原装 |
|||
ON |
23+ |
65480 |
IRFR9024TR芯片相关品牌
IRFR9024TR规格书下载地址
IRFR9024TR参数引脚图相关
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
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