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IRFR9024TR价格
参考价格：￥3.4325
型号：IRFR9024TRLPBF 品牌：VISHAY 备注：这里有IRFR9024TR多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR9024TR批发/采购报价，IRFR9024TR行情走势销售排行榜，IRFR9024TR报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR9024TR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 |   | |
IRFR9024TR | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | |
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -60V, ID= -30A RDS(ON) | BYCHIP 百域芯 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET 文件：4.49216 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：4.49216 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：4.49216 Mbytes Page：7 Pages | KERSEMI | | ||
P-Channel 60-V (D-S) MOSFET 文件：1.02798 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：4.49216 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：4.49216 Mbytes Page：7 Pages | KERSEMI | | ||
Power MOSFET 文件：4.49216 Mbytes Page：7 Pages | KERSEMI | | ||
P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R | FAIRCHILD 仙童半导体 | | ||
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-1.6A) Vdss=-60V Rds(on)=0.28Ω Id=-1.6A | IRF | | ||
Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-8.8A) Description Third Generation HEXFETs MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9024) • St | IRF | | ||
900 MHz transmit modulator and 1.3 GHz fractional-N synthesizer DESCRIPTION This specification defines the requirements for a transmitter modulator and fractional–N synthesizer IC to be used in cellular telephones which employ the North American Dual Mode Cellular System (IS–136). FEATURES • Low current from 3.75V supply • Low phase noise • Main loop with | PHILIPS 飞利浦 | | ||
Advanced Power MOSFET 文件：230.51 Kbytes Page：7 Pages | FAIRCHILD 仙童半导体 | |
IRFR9024TR产品属性
- 类型
描述
- 型号
IRFR9024TR
- 功能描述
MOSFET P-Chan 60V 8.8 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERNATIONALRECTIFIER |
24+ |
NA |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
2517+ |
SOT252 |
8850 |
只做原装正品现货或订货假一赔十! |
|||
IRFR9024TR |
25+ |
1155 |
1155 |
||||
IR |
22+ |
TO-252 |
8000 |
原装正品支持实单 |
|||
IR |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
24+ |
TO-252 |
36800 |
||||
Vishay |
23+ |
电感 |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
IR |
26+ |
TO-252 |
86910 |
全新原装进口现货价格优惠 本公司承诺原装正品假一赔 |
|||
Vishay(威世) |
25+ |
TO-252 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
|||
IR |
1923+ |
TO-252 |
6896 |
原装进口现货库存专业工厂研究所配单供货 |
IRFR9024TR芯片相关品牌
IRFR9024TR规格书下载地址
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瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30
DdatasheetPDF页码索引
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