位置：首页 > IC中文资料第372页 > IRFR9024
IRFR9024价格
参考价格：￥1.6098
型号：IRFR9024NPBF 品牌：INTERNATIONAL 备注：这里有IRFR9024多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR9024批发/采购报价，IRFR9024行情走势销售排行榜，IRFR9024报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR9024 | P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |   | |
IRFR9024 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世科技威世科技半导体 | | |
IRFR9024 | Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-8.8A) Description Third Generation HEXFETs MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9024) • St | IRF | | |
IRFR9024 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | |
IRFR9024 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | |
IRFR9024 | Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | |
IRFR9024 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | | |
IRFR9024 | -60V P -Channel Enhancement Mode MOSFET General Features Vps =-60V Ip=-20A Robson) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | |
IRFR9024 | 60V P-Channel Enhancement Mode MOSFET General Features Vos = -60V Ip =-20 A Ros(on) | EVVOSEMI 翊欧 | | |
IRFR9024 | isc P-Channel MOSFET Transistor FEATURES · Drain Current -ID= -8.8A@ TC=25℃ · Drain Source Voltage -VDSS= -60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.28Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
IRFR9024 | isc P-Channel MOSFET Transistor 文件：321.91 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFR9024 | Power MOSFET 文件：4.49216 Mbytes Page：7 Pages | KERSEMI | | |
IRFR9024 | Power MOSFET 文件：1.1361 Mbytes Page：11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | KERSEMI | | ||
ULTRA LOW ON-RESISTANCE Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | KERSEMI | | ||
HEXFET POWER MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
HEXFET POWER MOSFET ( VDSS = -55V , RDS(on) = 0.175廓 , ID = -11A ) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
ULTRA LOW ON-ORSISTANCE Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | KERSEMI | | ||
ULTRA LOW ON-RESISTANCE Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | KERSEMI | | ||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
-60V P -Channel Enhancement Mode MOSFET General Features Vps =-60V Ip=-20A Robson) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | ||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
60V P-Channel Enhancement Mode MOSFET General Features Vos = -60V Ip =-20 A Ros(on) | EVVOSEMI 翊欧 | | ||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide | IRF | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
HEXFET POWER MOSFET ( VDSS = -60V , RDS(on) = 0.28廓 , ID = -8.8A ) Description Third Generation HEXFETs MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9024) • Stra | IRF | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
P-channel Enhancement Mode Power MOSFET Features VDS= -60V, ID= -30A RDS(ON) | Bychip 百域芯 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR9024, SiHFR9024) • Straight lead (IRFU9024, SiHFU9024) • Available in tape and reel • P-channel • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th | KERSEMI | | ||
Power MOSFET 文件：1.1361 Mbytes Page：11 Pages | VishayVishay Siliconix 威世科技威世科技半导体 | | ||
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-11A) 文件：117.92 Kbytes Page：10 Pages | IRF | | ||
Ultra Low On-Resistance 文件：886.4 Kbytes Page：10 Pages | KERSEMI | | ||
isc P-Channel MOSFET Transistor 文件：309 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
P-Channel MOSFET 文件：228.83 Kbytes Page：7 Pages | KEXIN 科信电子 | | ||
ULTRA LOW ON RESISTANCE 文件：1.38963 Mbytes Page：11 Pages | IRF | | ||
Ultra Low On-Resistance 文件：1.38963 Mbytes Page：11 Pages | IRF | | ||
ULTRA LOW ON RESISTANCE 文件：1.38963 Mbytes Page：11 Pages | IRF | |
IRFR9024产品属性
- 类型
描述
- 型号
IRFR9024
- 功能描述
MOSFET P-Chan 60V 8.8 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
23+ |
IRFR9024NTRPB |
270 |
只做原装全系列供应价格优势 |
|||
IR |
2021+ |
D-PAK |
9450 |
原装现货。 |
|||
INFINEON |
25+ |
TO-252 |
10000 |
原装正品!!!优势库存!0755-83210901 |
|||
IR |
24+ |
DPAKTO-252 |
15800 |
绝对原装现货,价格低,欢迎询购! |
|||
INFINEON |
21+ |
SOP |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
INFINEON |
24+ |
TO-252 |
6600 |
代理授权直销,原装现货,假一罚十,价格优势 |
|||
INFINEON |
20+ |
TO-252 |
3000 |
只做原装,公司现货,提供一站式BOM配单服务! |
|||
IR |
24+ |
TO-252 |
48650 |
诚信经营原装现货 |
|||
INFINEON/英飞凌 |
24+ |
TO-252-3 |
36701 |
只做原装/假一赔十/安心咨询 |
|||
IR |
25+ |
TO-252 |
6000 |
全新原装现货、诚信经营! |
IRFR9024规格书下载地址
IRFR9024参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFU014
- IRFU012
- IRFU010
- IRFS840
- IRFS830
- IRFS750
- IRFS740
- IRFS730
- IRFS720
- IRFS654
- IRFS641
- IRFS640
- IRFS634
- IRFS630
- IRFS540
- IRFS530
- IRFS510
- IRFS450
- IRFS250
- IRFRC20
- IRFR9214PBF
- IRFR9210TRPBF
- IRFR9210PBF
- IRFR9120TRPBF
- IRFR9120TRLPBF
- IRFR9120PBF
- IRFR9120NTRPBF
- IRFR9120NTRLPBF
- IRFR9120NPBF
- IRFR9110TRPBF
- IRFR9110PBF
- IRFR9024TRPBF-CUTTAPE
- IRFR9024TRPBF
- IRFR9024TRLPBF
- IRFR9024PBF
- IRFR9024NTRRPBF
- IRFR9024NTRPBF-CUTTAPE
- IRFR9024NTRPBF
- IRFR9024NTRLPBF
- IRFR9024NPBF
- IRFR9020TRPBF
- IRFR9020PBF
- IRFR9014TRPBF-CUTTAPE
- IRFR9014TRPBF
- IRFR9014TRLPBF
- IRFR9014PBF
- IRFR9010TRPBF
- IRFR9010TR
- IRFR9010PBF
- IRFR8314TRPBF
- IRFR825TRPBF
- IRFR825
- IRFR812TRPBF
- IRFR812PBF
- IRFR812
- IRFR7746TRPBF
- IRFR7746PBF
- IRFR7740TRPBF
- IRFR7740PBF
- IRFR7546TRPBF
- IRFR7546PBF
- IRFR7540TRPBF
- IRFR48Z
- IRFR420
- IRFR410
- IRFR330
- IRFR325
- IRFR320
- IRFR310
- IRFR230
- IRFR224
- IRFR220
- IRFR214
- IRFR210
- IRFR120
- IRFR110
- IRFR024
- IRFR020
- IRFR014
- IRFR012
IRFR9024数据表相关新闻
IRFS3607TRLPBF 诺美思科技提供原装正品现货优势供应
IRFS3607TRLPBF 诺美思科技提供原装正品现货优势供应
2021-12-6IRFR9014TRPBF产品种类:MOSFET
IRFR9014TRPBF
2021-9-17IRFR9024NTRPBF公司原装正品现货
IRFR9024NTRPBF公司原装正品现货
2019-8-8IRFR5410TRPBF原装现货
IRFR5410TRPBF正品支持验货
2019-7-26IRFS38N20D进口原装现货
瀚佳科技(深圳）有限公司： 专业销售集成电路IC.单片机.内存闪存.二三级管模块等电子元器件。
2018-12-30IRFR5410TRPBF进口原装假一赔十
瀚佳科技： 专业销售集成电路IC.单片.内存闪存.二三级管模块等电子元器件.欢迎询价购买。
2018-12-28
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
