Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-1.6A)

Vdss=-60V Rds(on)=0.28Ω Id=-1.6A

Repetitive Avalanche Rated

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Power MOSFET

Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-1.6A)

Power MOSFET

FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • For automatic Insertion • End stackable • P-channel • 175 °C operating temperature • Fast switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation

HEXFET Power MOSFET

Vdss=-60V Rds(on)=0.28Ω Id=-1.6A * Lead-Free

P-Channel Enhancement Mode Field Effect Transistor

General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R

Power MOSFET(Vdss=-60V, Rds(on)=0.28ohm, Id=-8.8A)

Description Third Generation HEXFETs MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Surface Mount (IRFR9024) • St

900 MHz transmit modulator and 1.3 GHz fractional-N synthesizer

DESCRIPTION This specification defines the requirements for a transmitter modulator and fractional–N synthesizer IC to be used in cellular telephones which employ the North American Dual Mode Cellular System (IS–136). FEATURES • Low current from 3.75V supply • Low phase noise • Main loop with

Advanced Power MOSFET

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