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IRFU9024价格
参考价格:¥1.5143
型号:IRFU9024NPBF 品牌:INTERNATIONAL 备注:这里有IRFU9024多少钱,2024年最近7天走势,今日出价,今日竞价,IRFU9024批发/采购报价,IRFU9024行情走势销售排行榜,IRFU9024报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRFU9024 | PowerMOSFET(Vdss=-60V,Rds(on)=0.28ohm,Id=-8.8A) Description ThirdGenerationHEXFETsMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9024) •St | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFU9024 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技 | ||
IRFU9024 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFU9024 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFU9024 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFU9024 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9024,SiHFR9024) •Straightlead(IRFU9024,SiHFU9024) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | ||
IRFU9024 | iscP-ChannelMOSFETTransistor 文件:346.04 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRFU9024 | PowerMOSFET 文件:4.49216 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFU9024 | PowerMOSFET 文件:1.1361 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | ||
ULTRALOWON-RESISTANCE Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | |||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | |||
HEXFETPOWERMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPOWERMOSFET(VDSS=-55V,RDS(on)=0.175廓,ID=-11A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ULTRALOWON-RESISTANCE Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | |||
ULTRALOWON-ORSISTANCE Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | KERSEMI Kersemi Electronic Co., Ltd. | |||
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技 | |||
HEXFETPOWERMOSFET(VDSS=-60V,RDS(on)=0.28廓,ID=-8.8A) Description ThirdGenerationHEXFETsMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9024) •Stra | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | |||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9024,SiHFR9024) •Straightlead(IRFU9024,SiHFU9024) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | |||
iscP-ChannelMOSFETTransistor 文件:305.11 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerMOSFET(Vdss=-55V,Rds(on)=0.175ohm,Id=-11A) 文件:117.92 Kbytes Page:10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
UltraLowOn-Resistance 文件:2.20964 Mbytes Page:10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
UltraLowOn-Resistance 文件:1.38963 Mbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET 文件:4.49216 Mbytes Page:7 Pages | KERSEMI Kersemi Electronic Co., Ltd. | |||
INSULATEDPCSPACERS/SUPPORTS INSULATEDPCSPACERS/SUPPORTS •Boardwillbeelectricallyinsulated,eliminatesneedforinsulatingwashers •Easysnap-inassembly •Notoolrequiredforinstallation •Designedfor.062(1.57)thickboards •Onepiecedesigneliminatestheneedforadditionalscrewsandnuts •Slimdesig | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
MilitaryManaged24-Port1GEthernetRouter/Switch FEATURESDESCRIPTION EthernetisbecomingthestandardforIP-based componentsinmilitaryandcommercialapplications onland,seaandairplatforms. TheMILTECH9024isspecificallydesignedfor battlefieldC4ISR,voice,video,sensordataacquisition andcommunicationsinplatformsthatha | ENERCON Enercon Technologies Europe AG | |||
SnapRivets 文件:152.09 Kbytes Page:2 Pages | Heyco Heyco | |||
SnapRivets 文件:152.09 Kbytes Page:2 Pages | Heyco Heyco | |||
Cooper-WheelockAS/AHSerles 文件:240.06 Kbytes Page:4 Pages | GAMEWELL-FCIGamewell-FCI by Honeywell Gamewell-FCI by Honeywell |
IRFU9024产品属性
- 类型
描述
- 型号
IRFU9024
- 功能描述
MOSFET P-Chan 60V 8.8 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
MOTOROLA |
23+ |
NA |
6500 |
全新原装假一赔十 |
|||
IR |
2020+ |
TO-251 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
VISHAY(威世) |
23+ |
TO-251 |
7845 |
支持大陆交货,美金交易。原装现货库存。 |
|||
Vishay Siliconix |
23+ |
TO-251AA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
INFINEON/英飞凌 |
23+ |
TO-251 |
76000 |
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13 |
|||
INFINEON/英飞凌 |
21+ |
TO-251 |
7164 |
全新、原装 |
|||
IR |
23+ |
TO-251 |
9960 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
21+ |
TSOC6 |
20000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
||||
IR |
23+ |
TO-251 |
20540 |
保证进口原装现货假一赔十 |
|||
IR |
2020+ |
TO251 |
350000 |
100%进口原装正品公司现货库存 |
IRFU9024规格书下载地址
IRFU9024参数引脚图相关
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- IRFU010
- IRFS840
- IRFS830
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