IRFU9024价格

参考价格:¥1.5143

型号:IRFU9024NPBF 品牌:INTERNATIONAL 备注:这里有IRFU9024多少钱,2024年最近7天走势,今日出价,今日竞价,IRFU9024批发/采购报价,IRFU9024行情走势销售排行榜,IRFU9024报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFU9024

PowerMOSFET(Vdss=-60V,Rds(on)=0.28ohm,Id=-8.8A)

Description ThirdGenerationHEXFETsMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9024) •St

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFU9024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技

Vishay
IRFU9024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFU9024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFU9024

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFU9024

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9024,SiHFR9024) •Straightlead(IRFU9024,SiHFU9024) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技

Vishay
IRFU9024

iscP-ChannelMOSFETTransistor

文件:346.04 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFU9024

PowerMOSFET

文件:4.49216 Mbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFU9024

PowerMOSFET

文件:1.1361 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

ULTRALOWON-RESISTANCE

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

HEXFETPOWERMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPOWERMOSFET(VDSS=-55V,RDS(on)=0.175廓,ID=-11A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ULTRALOWON-RESISTANCE

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

ULTRALOWON-ORSISTANCE

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

UltraLowOn-Resistance

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

VishayVishay Siliconix

威世科技

Vishay

HEXFETPOWERMOSFET(VDSS=-60V,RDS(on)=0.28廓,ID=-8.8A)

Description ThirdGenerationHEXFETsMOSFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR9024) •Stra

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR9024,SiHFR9024) •Straightlead(IRFU9024,SiHFU9024) •Availableintapeandreel •P-channel •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技

Vishay

iscP-ChannelMOSFETTransistor

文件:305.11 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET(Vdss=-55V,Rds(on)=0.175ohm,Id=-11A)

文件:117.92 Kbytes Page:10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

UltraLowOn-Resistance

文件:2.20964 Mbytes Page:10 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

UltraLowOn-Resistance

文件:1.38963 Mbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:4.49216 Mbytes Page:7 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

INSULATEDPCSPACERS/SUPPORTS

INSULATEDPCSPACERS/SUPPORTS •Boardwillbeelectricallyinsulated,eliminatesneedforinsulatingwashers •Easysnap-inassembly •Notoolrequiredforinstallation •Designedfor.062(1.57)thickboards •Onepiecedesigneliminatestheneedforadditionalscrewsandnuts •Slimdesig

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

MilitaryManaged24-Port1GEthernetRouter/Switch

FEATURESDESCRIPTION EthernetisbecomingthestandardforIP-based componentsinmilitaryandcommercialapplications onland,seaandairplatforms. TheMILTECH9024isspecificallydesignedfor battlefieldC4ISR,voice,video,sensordataacquisition andcommunicationsinplatformsthatha

ENERCON

Enercon Technologies Europe AG

ENERCON

SnapRivets

文件:152.09 Kbytes Page:2 Pages

Heyco

Heyco

Heyco

SnapRivets

文件:152.09 Kbytes Page:2 Pages

Heyco

Heyco

Heyco

Cooper-WheelockAS/AHSerles

文件:240.06 Kbytes Page:4 Pages

GAMEWELL-FCIGamewell-FCI by Honeywell

Gamewell-FCI by Honeywell

GAMEWELL-FCI

IRFU9024产品属性

  • 类型

    描述

  • 型号

    IRFU9024

  • 功能描述

    MOSFET P-Chan 60V 8.8 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-26 22:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
MOTOROLA
23+
NA
6500
全新原装假一赔十
IR
2020+
TO-251
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
VISHAY(威世)
23+
TO-251
7845
支持大陆交货,美金交易。原装现货库存。
Vishay Siliconix
23+
TO-251AA
30000
晶体管-分立半导体产品-原装正品
INFINEON/英飞凌
23+
TO-251
76000
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13
INFINEON/英飞凌
21+
TO-251
7164
全新、原装
IR
23+
TO-251
9960
价格优势/原装现货/客户至上/欢迎广大客户来电查询
21+
TSOC6
20000
优势代理渠道,原装正品,可全系列订货开增值税票
IR
23+
TO-251
20540
保证进口原装现货假一赔十
IR
2020+
TO251
350000
100%进口原装正品公司现货库存

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