Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤115mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques.

Features VDS (V) = 100V ID = 16A (VGS = 10V) RDS(ON) =115mW (VGS = 10V)

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 16A (VGS = 10V) RDS(ON) =115mW (VGS = 10V)

采用 D-Pak 封装的 100V 单 N 通道 IR MOSFET

Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

文件：141.83 Kbytes Page：10 Pages

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques.

Features VDS (V) = 100V ID = 16A (VGS = 10V) RDS(ON) =115mW (VGS = 10V)

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 16A (VGS = 10V) RDS(ON) =115mW (VGS = 10V)

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Ultra Low On-Resistance

文件：397.99 Kbytes Page：11 Pages

ULTRA LOW ON RESISTANCE

文件：397.99 Kbytes Page：11 Pages

ULTRA LOW ON RESISTANCE

文件：397.99 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：397.99 Kbytes Page：11 Pages

N-Channel 100 V (D-S) MOSFET

文件：979.57 Kbytes Page：7 Pages

丝印代码：4s；Power supply, standard voltage

Power supply, standard voltage

7.6mm 0.3 inch COMPACT NUMERIC FRAME DISPLAY

FEATURES • Bright Bold Segments • Common Anode/Cathode • Low Power Consumption • Low Current Capability • Neutral Segments • Grey Face • Epoxy Encapsulated Frame • High Performance • High Reliability APPLICATIONS • Appliances • Automotive • Instrumentation • Process Control

Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

文件：141.83 Kbytes Page：10 Pages

4-Bit DAC and Voltage Monitor

文件：222.85 Kbytes Page：6 Pages