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IRFR3910价格
参考价格：￥8.3643
型号：IRFR3910HR 品牌：International Rectifier 备注：这里有IRFR3910多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR3910批发/采购报价，IRFR3910行情走势销售排行榜，IRFR3910报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR3910 | Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p | KERSEMI |   | |
IRFR3910 | N-Channel MOSFET Transistor • DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤115mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation | ISC 无锡固电 | | |
IRFR3910 | The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques. Features VDS (V) = 100V ID = 16A (VGS = 10V) RDS(ON) =115mW (VGS = 10V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | |
IRFR3910 | MOSFET Description The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 16A (VGS = 10V) RDS(ON) =115mW (VGS = 10V) | EVVOSEMI 翊欧 | | |
IRFR3910 | Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A) 文件：141.83 Kbytes Page：10 Pages | IRF | | |
HEXFET Power MOSFET Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p | IRF | | ||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p | KERSEMI | | ||
MOSFET Description The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 16A (VGS = 10V) RDS(ON) =115mW (VGS = 10V) | EVVOSEMI 翊欧 | | ||
The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques. Features VDS (V) = 100V ID = 16A (VGS = 10V) RDS(ON) =115mW (VGS = 10V) | UMWGuangdong Youtai Semiconductor Co., Ltd. 友台半导体广东友台半导体有限公司 | | ||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p | IRF | | ||
Ultra Low On-Resistance Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p | IRF | | ||
Ultra Low On-Resistance 文件：397.99 Kbytes Page：11 Pages | IRF | | ||
ULTRA LOW ON RESISTANCE 文件：397.99 Kbytes Page：11 Pages | IRF | | ||
ULTRA LOW ON RESISTANCE 文件：397.99 Kbytes Page：11 Pages | IRF | | ||
Ultra Low On-Resistance 文件：397.99 Kbytes Page：11 Pages | IRF | | ||
N-Channel 100 V (D-S) MOSFET 文件：979.57 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
ADC3910Dx and ADC3910Sx 10-bit, 25 to 125-MSPS Low Latency, Low Power, Small, Single and Dual Channel ADC with Integrated Input Buffers 1 Features • Sampling rate up to 125MSPS • Latency: 1 clock cycle • Low power (2 ch.): – 92 mW at 125 MSPS – 59 mW at 25 MSPS – 4 mW in PD mode • Small footprint: 32-VQFN (4mm x 4 mm) • Single or dual channel ADC • Dual digital comparators • Reference: internal or external • No missing | TI1 德州仪器 | | ||
ADC3910Dx and ADC3910Sx 10-bit, 25 to 125MSPS Low Latency, Low Power, Small, Single and Dual Channel ADC with Integrated Input Buffers 1 Features • Sampling rate up to 125MSPS • Latency: 1 clock cycle • Low power (2 channel): – 92mW at 125MSPS – 59mW at 25MSPS – 4mW in PD mode • Small footprint: 32-VQFN (4mm x 4mm) • Single or dual channel ADC • Dual digital comparators • Reference: internal or external • No missing co | TI1 德州仪器 | | ||
Locking Releasable Wire Clips 文件：107.18 Kbytes Page：1 Pages | HeycoHeyco. 海科 | | ||
Dual Half Bridge Motor Driver 文件：231.41 Kbytes Page：7 Pages | ALLEGRO | | ||
Dual Half Bridge Motor Driver 文件：245.86 Kbytes Page：7 Pages | ALLEGRO | |
IRFR3910产品属性
- 类型
描述
- 型号
IRFR3910
- 制造商
undefined
- 制造商
International Rectifier
- 功能描述
MOSFET N D-PAK
- 制造商
International Rectifier
- 功能描述
MOSFET Transistor, N-Channel, TO-252AA
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINE0N |
21+ |
DPAK (TO-252) |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
|||
IR |
23+ |
TO-252 |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
|||
INFINEON/英飞凌 |
20+ |
TO-252 |
5000 |
进口原装假一赔十支持含税 |
|||
NK/南科功率 |
TO-252-2 |
2255 |
国产南科平替供应大量 |
||||
IR |
2020+ |
TO-252 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
UMW 友台 |
23+ |
TO-252 |
10000 |
原装正品，实单请联系 |
|||
INFINEON |
21+ |
TO-252 |
4000 |
十年信誉,只做原装,有挂就有现货! |
|||
IR |
24+ |
TO-252 |
20540 |
保证进口原装现货假一赔十 |
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2018-12-28
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