N-Channel MOSFET Transistor

• DESCRITION • Fast switching • FEATURES • Static drain-source on-resistance: RDS(on)≤115mΩ • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques.

Features VDS (V) = 100V ID = 16A (VGS = 10V) RDS(ON) =115mW (VGS = 10V)

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 16A (VGS = 10V) RDS(ON) =115mW (VGS = 10V)

Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

文件：141.83 Kbytes Page：10 Pages

采用 D-Pak 封装的 100V 单 N 通道 IR MOSFET

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 16A (VGS = 10V) RDS(ON) =115mW (VGS = 10V)

The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques.

Features VDS (V) = 100V ID = 16A (VGS = 10V) RDS(ON) =115mW (VGS = 10V)

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

ULTRA LOW ON RESISTANCE

文件：397.99 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：397.99 Kbytes Page：11 Pages

ULTRA LOW ON RESISTANCE

文件：397.99 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：397.99 Kbytes Page：11 Pages

N-Channel 100 V (D-S) MOSFET

文件：979.57 Kbytes Page：7 Pages

ADC3910Dx and ADC3910Sx 10-bit, 25 to 125-MSPS Low Latency, Low Power, Small, Single and Dual Channel ADC with Integrated Input Buffers

1 Features • Sampling rate up to 125MSPS • Latency: 1 clock cycle • Low power (2 ch.): – 92 mW at 125 MSPS – 59 mW at 25 MSPS – 4 mW in PD mode • Small footprint: 32-VQFN (4mm x 4 mm) • Single or dual channel ADC • Dual digital comparators • Reference: internal or external • No missing

ADC3910Dx and ADC3910Sx 10-bit, 25 to 125MSPS Low Latency, Low Power, Small, Single and Dual Channel ADC with Integrated Input Buffers

1 Features • Sampling rate up to 125MSPS • Latency: 1 clock cycle • Low power (2 channel): – 92mW at 125MSPS – 59mW at 25MSPS – 4mW in PD mode • Small footprint: 32-VQFN (4mm x 4mm) • Single or dual channel ADC • Dual digital comparators • Reference: internal or external • No missing co

Locking Releasable Wire Clips

文件：107.18 Kbytes Page：1 Pages

Dual Half Bridge Motor Driver

文件：231.41 Kbytes Page：7 Pages

Dual Half Bridge Motor Driver

文件：245.86 Kbytes Page：7 Pages