The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques.

Features VDS (V) = 100V ID = 16A (VGS = 10V) RDS(ON) =115mW (VGS = 10V)

MOSFET

Description The D-PAK is designed for surface mounting using vapor phase,infrared,or wave soldering techniques. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Features VDS (V) = 100V ID = 16A (VGS = 10V) RDS(ON) =115mW (VGS = 10V)

Ultra Low On-Resistance

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Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

N-Channel 100 V (D-S) MOSFET

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Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

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丝印代码：4s；Power supply, standard voltage

Power supply, standard voltage

7.6mm 0.3 inch COMPACT NUMERIC FRAME DISPLAY

FEATURES • Bright Bold Segments • Common Anode/Cathode • Low Power Consumption • Low Current Capability • Neutral Segments • Grey Face • Epoxy Encapsulated Frame • High Performance • High Reliability APPLICATIONS • Appliances • Automotive • Instrumentation • Process Control

Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

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4-Bit DAC and Voltage Monitor

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