HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

Ultra Low On-Resistance

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p

ULTRA LOW ON RESISTANCE

文件：397.99 Kbytes Page：11 Pages

Ultra Low On-Resistance

文件：397.99 Kbytes Page：11 Pages

ULTRA LOW ON RESISTANCE

文件：397.99 Kbytes Page：11 Pages

Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

文件：141.83 Kbytes Page：10 Pages

丝印代码：4s；Power supply, standard voltage

Power supply, standard voltage

7.6mm 0.3 inch COMPACT NUMERIC FRAME DISPLAY

FEATURES • Bright Bold Segments • Common Anode/Cathode • Low Power Consumption • Low Current Capability • Neutral Segments • Grey Face • Epoxy Encapsulated Frame • High Performance • High Reliability APPLICATIONS • Appliances • Automotive • Instrumentation • Process Control

Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

文件：141.83 Kbytes Page：10 Pages

4-Bit DAC and Voltage Monitor

文件：222.85 Kbytes Page：6 Pages